Dual Damascene Lithography with Single-Scan Dose Variation
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Solution Overview
Problem
Conventional lithography processes for forming dual damascene structures require multiple scans to create overlapping features, increasing fabrication time and decreasing throughput.
Innovation Solution
A method and apparatus that expose first and second portions of a photoresist to electromagnetic radiation at different doses within a single scan, forming dual damascene structures with smooth surfaces by varying the dose and surface area without realigning the radiation source and photoresist.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple scans are used to form overlapping features, then manufacturing precision is improved, but productivity deteriorates
Solution Approach 1:
The patent combines multiple exposure operations into a single scan by using a dynamic mask that can selectively block radiation in real-time. This allows the formation of overlapping features with different doses during one continuous pass, merging what would traditionally require multiple separate scans into a single integrated operation, thereby maintaining precision while improving throughput
Solution Approach 2:
The patent employs a dynamic mask that can change its configuration during the exposure process. This dynamic element allows the system to adapt the radiation pattern in real-time, enabling different portions of the photoresist to receive different doses within a single scan, thus achieving complex dual damascene structures without requiring multiple static exposure passes
2Manufacturing precision
If multiple scans are used to form overlapping features, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The patent merges multiple exposure operations into a single scan by using a dynamic mask that can selectively block radiation in real-time. This allows the formation of overlapping features with different doses during one continuous pass, combining what would traditionally require multiple separate scans into a single integrated operation, thereby maintaining precision while reducing processing time
Solution Approach 2:
The dynamic mask is pre-configured with patterns that correspond to the features to be formed. Before the single scan begins, the mask is positioned and configured to deliver the appropriate radiation doses to different regions, eliminating the need for multiple scans and realignment operations, thus reducing processing time while maintaining manufacturing precision
3Manufacturing precision
If multiple scans are used to form overlapping features, then ease of operation deteriorates, but manufacturing precision is improved
Solution Approach 1:
The patent combines multiple exposure operations into a single scan using a dynamic mask, which simplifies the operational process by eliminating the need for multiple scan setups, realignments, and intermediate handling steps. The dynamic mask automatically manages the complex radiation patterning during one continuous pass, making the overall process easier to operate while maintaining high manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing time and improves structure quality by forming dual damascene structures with smooth surfaces in a single scan, eliminating position drift and reducing the need for multiple passes.
Implementation Method 1
exposing first portions within a first region of a photoresist to electromagnetic radiation from a radiation source at a first dose. Second portions within the first region of the photoresist are exposed to electromagnetic radiation from the radiation source at a second dose
Data Source
AI summary
Embodiments of the disclosure include apparatus and methods for fabricating dual damascene structures. First portions within a first region of a photoresist are exposed to electromagnetic radiation from a radiation source at a first dose. The first portions have first depths and first surface areas. Second portions within the first region of the photoresist are exposed to electromagnetic radiation from the radiation source at a second dose. The second portions have second depths and second surface areas, each of the first surface areas of the first portions is disposed within one of the second surface areas of the second portions. Third portions within a second region of the photoresist are exposed to the electromagnetic radiation from the radiation source at the first dose. The third portions have the first depths and the first surface areas.