Dual Damascene Etch Barrier Structure for Semiconductor Manufacturing
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Solution Overview
Problem
The existing dual damascene process for semiconductor manufacturing often damages low-k materials due to the requirement of multiple strip/cleaning processes, which can compromise the integrity and reliability of the dielectric layer.
Innovation Solution
A method is introduced that involves forming a dielectric layer with an etch barrier and an assist-etch barrier, where the etch barrier includes carbon-containing and silicon-containing materials, allowing for a single strip/cleaning process by performing via and trench etching simultaneously, thereby minimizing damage to the dielectric layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple strip/cleaning processes are performed during dual damascene manufacturing, then via holes and trenches can be formed separately, but damage to the dielectric layer increases
Solution Approach 1:
The patent combines the formation of via holes and trenches into a single etching process by using a unified etch barrier structure with a first etch barrier layer and a second etch barrier layer. The first layer defines via hole openings and the second layer defines trench openings, allowing both features to be formed simultaneously in one process step, thereby eliminating multiple strip/cleaning operations and reducing damage to the low-k dielectric layer.
2Object-affected harmful factors
If a single strip/cleaning process is used, then damage to the dielectric layer is reduced, but the complexity of the etch barrier structure increases
Solution Approach 1:
The etch barrier structure is segmented into two functional layers: a first etch barrier layer that defines via hole openings and a second etch barrier layer that defines trench openings. This segmentation allows each layer to be optimized for its specific function while enabling simultaneous formation of via holes and trenches in a single etching process, reducing dielectric layer damage despite the increased structural complexity.
3Manufacturing precision
If multiple etching processes are performed sequentially, then via holes and trenches can be formed with high precision, but the manufacturing time increases
Solution Approach 1:
The patent merges the sequential formation of via holes and trenches into a single simultaneous etching process. The unified etch barrier structure with its first and second layers allows one etching operation to define both via hole openings and trench openings at the same time, significantly reducing manufacturing time while maintaining the precision required for each feature type.
Data Source
AI summary
A method for manufacturing a semiconductor device include forming a dielectric layer over an underlying layer; forming an etch barrier over the dielectric layer, wherein a partial via opening is formed in the etch barrier and exposes a lower portion of the etch barrier; forming an assist-etch barrier over the etch barrier to fill the partial via opening; patterning the assist-etch barrier to form an initial trench opening in the assist-etch barrier, wherein the initial trench opening communicates with the partial via opening; patterning the lower portion of the etch barrier exposed by the partial via opening to form a final via opening in the etch barrier; patterning the dielectric layer exposed by the final via opening to form an initial via hole in the dielectric layer; patterning the etch barrier exposed by the initial trench opening to form a final trench opening in the etch barrier; patterning a lower portion of the dielectric layer exposed by the initial via hole to form a final via hole in the dielectric layer; and patterning a upper portion of the dielectric layer exposed by the final trench opening to form a trench, wherein the trench communicates the final via hole.