Dual Damascene Redistribution Layer Adhesion
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Solution Overview
Problem
Current packaging technologies face challenges in forming high-density, low-cost redistribution layers for semiconductor packages with improved mechanical strength and electrical reliability, particularly in achieving conformal seed layers and dual damascene structures that provide better adhesion and lower transmission loss.
Innovation Solution
The method involves forming a first dielectric layer with via openings and a second dielectric layer with trench openings, followed by a conformal seed metallic layer and a metal layer that fills dual damascene openings, resulting in dual damascene redistribution patterns with improved adhesion and mechanical strength, and subsequent planarization to form a redistribution layer with dual damascene patterns that enhance electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional packaging technologies are used, then manufacturing cost is reduced, but transmission loss increases and mechanical strength deteriorates
Solution Approach 1:
The patent divides the redistribution layer formation into multiple sequential steps: forming via openings in a first dielectric layer, forming trench openings in a second dielectric layer, creating dual damascene openings by combining both, and selectively filling different metal layers. This segmentation enables precise control over adhesion and electrical properties, reducing transmission loss while maintaining manufacturing feasibility through standardized process modules.
Solution Approach 2:
The patent applies different materials and structures to different regions: a conformal seed metallic layer is formed only in specific areas requiring enhanced adhesion, dual damascene patterns are created in high-frequency signal paths to reduce transmission loss, while other areas use simpler structures. This localized optimization balances performance improvement with manufacturing cost.
2Strength
If dual damascene structures are formed, then adhesion and mechanical strength are improved, but device complexity increases
Solution Approach 1:
The dual damascene structure is segmented into distinct via openings and trench openings formed in separate dielectric layers. The via openings penetrate the first dielectric layer while trench openings are formed in the second dielectric layer, allowing independent optimization of each structure's adhesion properties. This segmentation reduces overall device complexity by breaking down the complex dual damascene formation into manageable, repeatable process steps.
Solution Approach 2:
The patent performs preliminary actions by first forming the conformal seed metallic layer in the via openings before forming the trench openings. This preliminary adhesion layer is established early in the process, ensuring strong mechanical bonding before subsequent metal filling and planarization steps. This preliminary action simplifies later processing while guaranteeing mechanical strength.
3Reliability
If conformal seed layers are formed, then adhesion is improved, but manufacturing precision requirements increase
Solution Approach 1:
The conformal seed metallic layer is formed locally only in the via openings where enhanced adhesion is critical, rather than uniformly across the entire substrate. This localized application reduces the overall manufacturing precision burden while maintaining adhesion reliability in the most critical regions. The seed layer conformally coats only the necessary surfaces, optimizing the balance between adhesion improvement and manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of semiconductor packages with lower costs, reduced transmission loss, and improved mechanical strength, making them suitable for high-density and high-frequency applications while maintaining reliability and electrical performance.
Implementation Method 1
a conformal seed metallic layer and a metal layer are formed over the second dielectric layer
Implementation Method 2
a metal layer is formed on the conformal seed metallic layer to fill the dual damascene openings
Data Source
AI summary
A semiconductor package has at least one die, a first redistribution layer and a second redistribution layer. The first redistribution layer includes a first dual damascene redistribution pattern having a first via portion and a first routing portion. The second redistribution layer is disposed on the first redistribution layer and over the first die and electrically connected with the first redistribution layer and the first die. The second redistribution layer includes a second dual damascene redistribution pattern having a second via portion and a second routing portion. A location of the second via portion is aligned with a location of first via portion.