Dual-Depth Dielectric Isolation for High Power Device Integration
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Solution Overview
Problem
Conventional high power device isolation methods compromise between inter-device isolation effectiveness and device performance, necessitating improved dielectric isolation techniques to optimize both.
Innovation Solution
The method involves forming dielectric isolation in a semiconductor substrate with varying depths of trench isolation, such as shallow trench isolation (STI), very shallow trench isolation (VSTI), dual-depth STI (DDSTI), local oxidation of silicon (LOCOS), and deep trench isolation (DTI), to create distinct regions for high power devices and conventional devices, ensuring effective electrical isolation while optimizing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric isolation methods are used to electrically isolate high power devices from other devices, then inter-device isolation effectiveness is improved, but device performance deteriorates due to compromise between isolation and performance
Solution Approach 1:
The patent applies segmentation by dividing the dielectric isolation into multiple depth levels: a first dielectric isolation at a first depth and a second dielectric isolation at a second depth greater than the first depth. This multi-level segmentation allows different regions to have different isolation characteristics, enabling effective inter-device isolation while preserving device performance in high power device regions.
Solution Approach 2:
The patent implements local quality by creating region-specific isolation structures where the first dielectric isolation provides enhanced isolation for high power devices while the second dielectric isolation provides isolation for other devices. This localized approach allows each region to have optimized isolation characteristics tailored to its specific device requirements, resolving the conflict between isolation effectiveness and device performance.
2Reliability
If deep dielectric isolation is used to improve isolation between high power devices and conventional devices, then isolation effectiveness is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the isolation structure into two distinct dielectric isolation layers at different depths, which can be formed using separate processing steps. This segmentation allows the manufacturing process to address each isolation level independently, managing complexity through modular processing while achieving comprehensive isolation effectiveness.
Solution Approach 2:
The patent resolves manufacturing complexity by adding a depth dimension to the isolation structure, creating isolation at multiple vertical levels rather than relying on a single complex deep isolation structure. This dimensional approach simplifies manufacturing by using repeated, standardized isolation formation processes at different depths rather than attempting a single monolithic deep isolation.
Data Source
AI summary
A structure and method of fabricating the structure. The structure including: a dielectric isolation in a semiconductor substrate, the dielectric isolation extending in a direction perpendicular to a top surface of the substrate into the substrate a first distance, the dielectric isolation surrounding a first region and a second region of the substrate, a top surface of the dielectric isolation coplanar with the top surface of the substrate; a dielectric region in the second region of the substrate; the dielectric region extending in the perpendicular direction into the substrate a second distance, the first distance greater than the second distance; and a first device in the first region and a second device in the second region, the first device different from the second device, the dielectric region isolating a first element of the second device from a second element of the second device.