Dual-Developer Resist Pattern Formation for High Resolution
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Solution Overview
Problem
Conventional pattern formation methods for semiconductor devices using ArF excimer laser exposure struggle with achieving sufficient exposure margin and resolving power due to interference between adjacent patterns, leading to inadequate optical contrast and focal depth, especially in double exposure systems.
Innovation Solution
A pattern forming method involving a positive resist composition whose solubility increases in a positive developer and decreases in a negative developer upon irradiation, allowing for sequential development with both positive and negative developers to enhance resolving power and prevent pattern distortion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional single developer systems are used, then the process is simple, but the resolving power and optical contrast are insufficient
Solution Approach 1:
The development process is segmented into two distinct stages: first development with a positive developer to remove exposed areas, and second development with a negative developer to remove remaining unexposed areas. This segmentation allows each developer to be optimized for its specific function, achieving high resolving power while maintaining process manageability through clear sequential steps.
Solution Approach 2:
The invention inverts the conventional approach by using a positive developer first (which normally removes unexposed areas in negative development) and then a negative developer. This inverted sequence enables the formation of fine patterns with high optical contrast by leveraging the complementary solubility characteristics of the resist in the two different developers.
2Manufacturing precision
If double exposure systems are used to enhance resolving power, then the resolution improves, but the exposure mask design becomes complex and pattern distortion occurs
Solution Approach 1:
The dual-developer system acts as an intermediary mechanism that achieves double the resolution of a single exposure without requiring a divided exposure mask. The first developer and second developer work sequentially as intermediaries to transform the single exposure pattern into a high-resolution final pattern, avoiding the complexity of mask design division while preventing pattern distortion.
3Manufacturing precision
If conventional positive development is used, then the process is straightforward, but the exposure margin is insufficient
Solution Approach 1:
The invention introduces dynamic adaptability to the development process by employing two different developers with distinct solubility characteristics. The first developer operates under one set of conditions to remove exposed areas, while the second developer operates under different conditions to remove remaining material. This dynamic approach expands the exposure margin by providing flexibility in how the resist responds to exposure, while the standardized sequential process maintains ease of operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method stabilizes high-precision fine pattern formation by selectively dissolving exposed areas with positive and negative developers, achieving twice the resolution of the optical aerial image without dividing the exposure mask design, thus improving the precision and fidelity of semiconductor device patterns.
Implementation Method 1
a positive resist composition for multiple development, of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation
Data Source
AI summary
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.