Dual Drying Chamber Pressure Transfer for Pattern-Safe Substrates
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Solution Overview
Problem
Spin drying methods for substrates can break patterns formed on substrates, and existing supercritical drying processes may not effectively manage pressure transitions, leading to inefficiencies.
Innovation Solution
A substrate processing apparatus with a first and second drying unit, each controlled by a door mechanism that opens at specific transfer pressures, allowing for controlled pressure transitions and sequential drying processes using supercritical fluids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If spin drying process is used to remove rinse liquids from substrates, then drying speed is improved, but patterns on substrates are damaged
Solution Approach 1:
The patent changes the physical parameters of the drying fluid by using supercritical carbon dioxide (temperature above 31.1°C and pressure above 73.8 atm) instead of conventional gases. This supercritical state allows the fluid to penetrate and remove liquids effectively while gently displacing patterns, resolving the contradiction between drying speed and pattern integrity
Solution Approach 2:
The patent utilizes phase transitions of carbon dioxide between supercritical and gaseous states. The CO2 is heated and pressurized to supercritical state for drying, then decompressed to gaseous state for removal. This phase transition enables effective liquid removal without mechanical stress that would damage patterns, achieving both fast drying and pattern protection
2Manufacturing precision
If supercritical drying process is used to replace rinse liquids with organic solvents, then pattern damage is reduced, but drying efficiency and solvent removal completeness are insufficient
Solution Approach 1:
The patent optimizes the supercritical parameters of carbon dioxide (temperature and pressure settings) to enhance drying efficiency. By carefully controlling these parameters, the system achieves both gentle pattern treatment and effective solvent removal, resolving the contradiction between pattern integrity and drying efficiency
Solution Approach 2:
The patent implements a continuous drying process where carbon dioxide is continuously supplied in supercritical state, maintains supercritical conditions throughout the drying cycle, and then continuously decompresses and removes. This continuous action ensures complete solvent removal while maintaining pattern integrity, improving both efficiency and effectiveness
3Reliability
If drying gas is supplied into sealed process chambers and heated/pressurized to supercritical state, then drying performance is improved, but system complexity and process control difficulty increase
Solution Approach 1:
The patent uses carbon dioxide as a universal drying fluid that can be easily transitioned between gaseous and supercritical states using standard heating and pressurization equipment. This multi-functional approach allows the same system to perform both drying and fluid removal functions, reducing overall system complexity while maintaining high drying performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances drying performance by minimizing pattern damage and optimizing pressure management in substrate drying, ensuring efficient removal of liquids without disrupting substrate structures.
Implementation Method 1
a first drying unit configured to perform a first drying process using a drying fluid on a substrate having a liquid film formed thereon
Implementation Method 2
the drying gases are heated and/or pressurized. Accordingly, both the temperature and pressure of the drying gases rise above a critical point, and the drying gases undergo phase changes to supercritical states
Data Source
AI summary
A substrate processing apparatus includes a first drying unit configured to perform a first drying process using a drying fluid on a substrate having a liquid film formed thereon, a first fluid supply unit configured to supply the drying fluid into the first drying unit, a second drying unit configured to perform a second drying process using the drying fluid on the substrate on which the first drying process is performed, a second fluid supply unit configured to supply the drying fluid into the second drying unit, a first door configured to control opening and closing of the first drying unit, and a second door configured to control opening and closing of the second drying unit, wherein the first door is opened when pressure in the first drying unit reaches a first transfer pressure, and the second door is opened when pressure in the second drying unit reaches a second transfer pressure.