Dual Edge Termination Structure for Compact High-Voltage Semiconductors
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Solution Overview
Problem
Semiconductor components face challenges in achieving cost-effective and reliable edge termination designs that prevent premature breakdown under reverse voltage, moisture, and external charges, while minimizing space requirements and corrosion risks.
Innovation Solution
The semiconductor component incorporates a dual-edge termination structure, where a first edge termination structure eliminates the need for metal field plates and reduces corrosion risk, and a second edge termination structure extends deeper into the semiconductor body, reducing electric field strength and space requirements, using dielectrics and deep doping profiles to enhance voltage blocking capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional edge termination structure is used, then the component can block reverse voltage, but the area requirement is large and cost increases
Solution Approach 1:
The patent transitions from a planar edge termination structure to a three-dimensional structure by extending the edge termination region vertically into the semiconductor body. The second edge termination structure extends deeper than the first, creating a stepped configuration that reduces lateral area while maintaining voltage blocking capability through increased vertical depth.
2Reliability
If metal field plates are used in the edge termination structure, then voltage blocking is improved, but corrosion risk increases under moisture
Solution Approach 1:
The patent removes metal field plates from the edge termination structure entirely. Instead, it uses a fully semiconductor-based solution with doped regions forming the edge termination structures, thereby eliminating the corrosion risk associated with metal field plates while maintaining voltage blocking functionality.
3Reliability
If the edge termination extends deeper into the semiconductor body, then electric field strength is reduced and reliability improves, but manufacturing complexity increases
Solution Approach 1:
The patent divides the edge termination into two distinct structures: a first edge termination structure with a certain depth and a second edge termination structure extending deeper into the semiconductor body. This segmentation allows each structure to perform specific functions - the first structure provides initial field management while the second structure extends the termination effect deeper, reducing peak electric field strength without requiring a single complex deep structure.
Data Source
AI summary
A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.