Dual Electrode Array for Plasma Density Control
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Solution Overview
Problem
Existing plasma processing apparatuses for semiconductor device fabrication face challenges in achieving uniform etch profiles and controlling plasma density across different regions of the substrate, leading to variations in etched depths and widths, which affects the quality and yield of semiconductor devices.
Innovation Solution
A plasma processing apparatus with a dual electrode array system, where the first and second sub-electrodes are separately controlled by RF power sources and matching units to create distinct plasma density distributions in different regions of the plasma chamber, allowing for precise control of etching processes through adjustable heights and RF power levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing apparatuses are used, then the etching process can be performed, but uniform etch profiles and plasma density control across different regions of the substrate cannot be achieved
Solution Approach 1:
The plasma processing apparatus divides the electrode system into multiple sub-electrodes (first sub-electrodes and second sub-electrodes) arranged in arrays. Each sub-electrode can be independently controlled by separate RF power sources, allowing regional plasma density control to achieve uniform etch profiles across the substrate.
Solution Approach 2:
Different regions of the substrate receive different RF power levels through independently controlled sub-electrodes. This enables localized plasma density adjustment to compensate for variations in pattern density and achieve consistent etch results across different areas of the substrate.
2Adaptability or versatility
If single electrode configuration is used, then device complexity is low, but plasma density control across different regions is insufficient
Solution Approach 1:
The single electrode is segmented into multiple sub-electrodes that can be independently controlled. This segmentation enables regional plasma density control to adapt to different pattern densities across the substrate while maintaining a manageable system architecture.
Solution Approach 2:
The RF power levels applied to different sub-electrodes can be dynamically adjusted based on the pattern density requirements of different substrate regions. This dynamic control enables versatile plasma density management to handle varying etching conditions.
3Manufacturing precision
If uniform RF power is applied across all electrodes, then system operation is simple, but variations in etched depths and widths occur
Solution Approach 1:
Different RF power levels are applied to different sub-electrodes based on the local pattern density requirements. This localized power control compensates for loading effects and achieves consistent etched dimensions across the substrate, with control parameters managed through automated systems.
Solution Approach 2:
The RF power parameter is varied across different sub-electrodes to optimize etching performance. By changing power levels regionally, the system achieves precise dimensional control while the control complexity is managed through automated matching units and control systems.
4Productivity
If plasma density is not controlled across regions, then process simplicity is maintained, but loading effects from pattern density variations cannot be reduced
Solution Approach 1:
The electrode array is segmented into multiple independently controllable sub-electrodes that can address different regions of the substrate. This enables regional plasma density control to reduce loading effects and improve device yield, with the dual array configuration providing the necessary control granularity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved uniformity in etched profiles and critical dimensions across the substrate, enhancing the quality and yield of semiconductor device structures by effectively managing plasma density and reducing the loading effect associated with pattern density variations.
Implementation Method 1
applying a first RF power source to a first plurality of sub-electrodes of the first electrode array by the first plurality of first matching units to form an etching plasma from the etching gas
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The method includes placing a substrate including a material layer thereon in a plasma chamber. The plasma chamber includes a housing, a first electrode array including a plurality of first sub-electrodes, a plurality of first matching units each electrically connected to one of the first sub-electrodes, and a second electrode array disposed in the housing, the second electrode array including a plurality of second sub-electrodes. The method also includes supplying an etching gas into the plasma chamber and applying a first RF power source to the first sub-electrodes of the first electrode array by the first matching units to form an etching plasma from the etching gas. The method further includes adjusting a distance between each of the first sub-electrodes and the substrate to generate a plasma density distribution across the substrate.