Dual Field Plate RF Semiconductor Component Design
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Solution Overview
Problem
Conventional radio frequency semiconductor components with single field plates struggle to effectively reduce parasitic capacitance and electric field peaks, limiting their performance and reliability.
Innovation Solution
The semiconductor component design incorporates two field plates with specific configurations, where one field plate is closer to the doped III-V layer and the gate contact, and the other extends beyond the gate contact, reducing parasitic capacitance and electric field peaks by evenly distributing the electric field and improving the surface electric field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single field plate is used in conventional radio frequency semiconductor components, then the device complexity is reduced, but the parasitic capacitance cannot be effectively reduced and electric field peaks cannot be controlled
Solution Approach 1:
The single field plate is segmented into two separate field plates with different positions and functions. The first field plate is positioned closer to the doped III-V layer to control electric field peaks, while the second field plate extends beyond the gate contact to reduce parasitic capacitance. This segmentation allows each field plate to independently address specific electrical characteristics, effectively resolving the contradiction between device complexity and performance reliability.
2Reliability
If the field plate is positioned closer to the doped III-V layer to reduce parasitic capacitance, then the parasitic capacitance decreases, but the electric field peaks increase
Solution Approach 1:
The field plate function is divided between two separately positioned field plates. The first field plate positioned closer to the doped III-V layer primarily controls electric field distribution and reduces peaks, while the second field plate extending beyond the gate contact primarily reduces parasitic capacitance. This spatial segmentation allows simultaneous optimization of both electrical characteristics without compromise.
3Reliability
If the field plate extends beyond the gate contact to reduce parasitic capacitance, then the parasitic capacitance decreases, but the electric field distribution becomes uneven
Solution Approach 1:
The electric field control function is segmented between two field plates with distinct spatial responsibilities. The first field plate near the doped III-V layer stabilizes the electric field distribution in the critical region, while the second field plate extending beyond the gate contact reduces parasitic capacitance. This segmentation enables both objectives to be achieved simultaneously with complementary functions.
Data Source
AI summary
The present disclosure discloses a semiconductor component and a method for forming the semiconductor component. The semiconductor component includes a substrate, a III-V layer, a doped III-V layer, a gate contact, a first field plate, and a second field plate. The gate contact has first and second sides away from the doped III-V layer. The first field plate has first and second sides, and the first side is closer to the second side of the gate contact than the second side. The second field plate has first and second sides, and the first side is closer to the second side of the gate contact than the second side. The first field plate is closer to the doped III-V layer than the second field plate and the first side and the second side of the gate contact.