Dual-Frame Semiconductor Layout for Noise-Isolated Voltage Detection

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Solution Overview

Problem

Existing semiconductor devices in electric vehicles face challenges in maintaining stable voltage output due to noise interference between high-voltage and low-voltage components, which affects the accuracy of motor control and battery state detection.

Innovation Solution

The semiconductor device employs a dual-frame structure with insulated low-voltage and high-voltage frames, using resistors to stabilize voltage output and incorporate noise-resistant circuits to ensure accurate voltage detection and control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If high-voltage and low-voltage chips are mounted on a common frame, then device integration is improved, but noise interference between high-voltage and low-voltage components increases

Engineering Contradiction:
Improvedevice integrationVSAvoidnoise interference
Core Design Contradiction:
Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The patent divides the common frame into separate high-voltage and low-voltage mounting regions with distinct grounding systems. The high-voltage frame and low-voltage frame are electrically isolated from each other, allowing each voltage domain to be treated as an independent segment with its own noise control strategy.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces an intermediary grounding structure that connects the high-voltage frame and low-voltage frame through a controlled impedance path. This intermediary element manages the electrical interaction between the two frames while maintaining galvanic isolation, thereby reducing noise coupling.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If high-voltage chip is supplied with high voltage, then power output capability is improved, but voltage detection accuracy deteriorates due to noise

Engineering Contradiction:
Improvepower output capabilityVSAvoidvoltage detection accuracy
Core Design Contradiction:
PowerVSMeasurement precision

Solution Approach 1:

The patent extracts the voltage detection function from the noisy high-voltage environment by implementing dedicated low-voltage detection circuits on the low-voltage frame. The high-voltage signals are separated from the detection pathways, allowing accurate measurement without exposure to high-voltage noise.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent creates equipotential regions for voltage detection by maintaining the same reference potential across all detection points on the low-voltage frame. This equipotential design eliminates potential differences that could introduce measurement errors, ensuring accurate voltage detection even when high voltage is present on the adjacent high-voltage frame.

Inventive Principle:
Principle #12Equipotentiality

3Measurement precision

If motor control accuracy is improved through better voltage detection, then system performance is improved, but device complexity increases

Engineering Contradiction:
Improvemotor control accuracyVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent merges the voltage detection function with the existing low-voltage frame structure, eliminating the need for separate detection substrates or additional isolation components. By integrating detection circuits into the low-voltage mounting region, the design achieves accurate motor control without proportionally increasing device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20260018499A1Semiconductor device, battery module, electric power module, and electric vehicle
Publication Date: 2026.01.15 ROHM CO LTD
  • US20260018499A1 patent drawing
  • US20260018499A1 patent drawing
  • US20260018499A1 patent drawing

AI summary

A semiconductor device includes a low-voltage side frame configured to be connected to a low-voltage chip driven by an input voltage and connected to a ground potential; and a high-voltage side frame configured to be insulated from the low-voltage side frame and connected to a high-voltage chip supplied with a supply voltage having a higher voltage than the input voltage. The high-voltage side frame is connected to a reference potential.