Dual-Frequency Plasma Deposition for Conformal Deep Feature Filling
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Solution Overview
Problem
Current deposition methods struggle to fill deep and complex patterned structures with high quality and conformal films, often resulting in poor sidewall film quality or incomplete deposition in the bottom of deep structures.
Innovation Solution
A hybrid dual frequency plasma method is employed, combining continuous and pulsed plasma cycles to deposit films, utilizing a continuous high RF power state and a pulsed low RF power state, with specific power and time periods, to achieve improved conformality and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current deposition methods are used to fill deep and complex patterned structures, then deposition speed may be maintained, but film quality on sidewalls and at the bottom of deep structures deteriorates
Solution Approach 1:
The patent employs a hybrid dual frequency plasma method that alternates between continuous high power plasma and pulsed low power plasma phases. This periodic action allows the plasma to penetrate deep structures during high power phases while maintaining film quality during low power phases, resolving the contradiction between deposition speed and film quality in deep patterned features
Solution Approach 2:
The patent changes plasma parameters by using dual frequency (13.56 MHz and 430 kHz) and alternating between high and low power states. This parameter modulation enables control over plasma species distribution and ion energy, achieving both high deposition rates and excellent film conformality in deep trenches and vias
2Productivity
If continuous high power plasma is used for deposition, then deposition speed increases, but film conformality in deep structures deteriorates
Solution Approach 1:
The hybrid dual frequency plasma method uses periodic alternation between continuous high power plasma (for deposition speed) and pulsed low power plasma (for film conformality). This temporal separation allows each phase to optimize for its specific function, achieving both high productivity and excellent conformality
Solution Approach 2:
The patent dynamically adjusts plasma power and frequency parameters during the deposition process. By making the plasma state variable rather than static, the system can adapt to different deposition requirements at different times, maintaining both speed and conformality
3Manufacturing precision
If pulsed low power plasma is used for deposition, then film quality improves, but deposition speed decreases
Solution Approach 1:
The patent uses periodic alternation between pulsed low power plasma (for film quality) and continuous high power plasma (for deposition speed). The low power phases deposit high quality film while the high power phases maintain overall deposition rate, resolving the speed-quality tradeoff
Solution Approach 2:
The patent merges two plasma modes (pulsed low power and continuous high power) into a hybrid dual frequency system. This combination allows the benefits of both modes to be realized simultaneously over the complete deposition cycle, achieving both quality and speed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the deposition of high-quality films with enhanced conformality, ensuring uniform coverage on both the sidewalls and bottom of complex patterned structures, with a controlled distribution of excited species and ions.
Implementation Method 1
In the reaction chamber, a hybrid dual frequency plasma cycle may be performed to deposit a film. The hybrid dual frequency plasma cycle may comprise forming a continuous plasma for a first time period and forming a pulsed plasma for a second time period.
Implementation Method 2
A hybrid dual frequency plasma method is employed, combining continuous and pulsed plasma cycles to deposit films
Data Source
AI summary
A method for depositing a film in a feature on a substrate, includes forming a hybrid dual frequency plasma. Forming a hybrid dual frequency plasma includes forming a continuous plasma at a high and low RF frequency for a first time period and forming a pulsed plasma at a low RF frequency for a second time period to deposit a film into the feature on the substrate.