Dual-Frequency Electrode Layout for Thin-Film Step Coverage
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in enhancing both the step coverage and dense degree of thin films deposited on substrates, as applying RF power with a single frequency leads to a trade-off between these qualities, resulting in reduced substrate quality.
Innovation Solution
A substrate processing apparatus that utilizes two electrodes with different RF power frequencies applied to separate gas flow paths, allowing for simultaneous enhancement of step coverage and dense degree of thin films through independent control of RF power frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If single frequency RF power is applied to the gas injection unit, then processing process can be performed, but quality of substrate is reduced
Solution Approach 1:
The gas injection unit is designed with multi-functionality, capable of operating in multiple modes: single frequency mode for simple processing, and multi-frequency mode for high-quality substrate processing. The system can selectively apply different RF power frequencies to different gas flow paths, making it universally applicable to various processing requirements while achieving superior substrate quality.
Solution Approach 2:
The system dynamically adjusts RF power frequencies applied to different gas flow paths based on processing requirements. The power application unit can independently control the frequency applied to each electrode, enabling flexible and dynamic optimization of substrate quality during the processing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus improves substrate quality by ensuring both high step coverage and dense film deposition, while reducing stress and bending deformation, thereby enhancing the overall processing outcome.
Implementation Method 1
a lower electrode disposed under the upper electrode so as to be apart from the upper electrode. The lower electrode may include: a first electrode to which a first RF power having a first frequency is applied; and a second electrode to which a second RF power having a second frequency differing from the first frequency is applied
Data Source
AI summary
The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports one or more substrates in the chamber; an upper electrode which is disposed above and arranged opposite to the substrate support part; and a lower electrode which is disposed below and spaced apart from the upper electrode, wherein the lower electrode includes a first electrode to which first RF power having a first frequency is applied and a second electrode to which second RF power having a second frequency different from the first frequency is applied.