Dual-Gain Boosting Amplifier for High Gain With Fewer Stages

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Solution Overview

Problem

Existing high-gain amplifiers face challenges in achieving sufficient gain while maintaining a compact size and low power consumption, especially at high operating frequencies due to the limitations of transistor intrinsic gain and passive component losses.

Innovation Solution

A high-gain amplifier based on double-gain boosting is proposed, comprising a first gain amplification unit with a first and second amplifier connected by a matching unit for primary amplification, and a second gain amplification unit connected in parallel for secondary boosting, utilizing a specific configuration of transmission lines and transistors to enhance gain without increasing chip size or power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the number of amplifier stages is increased to compensate for passive component losses, then the gain is improved, but the DC power consumption and chip size increase

Engineering Contradiction:
ImprovegainVSAvoidDC power consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the operating parameters by introducing simultaneous conjugate matching conditions at both input and output ports, and by using double-gain boosting technique that transforms the amplifier's S-parameters to achieve maximum available gain exceeding the transistor's maximum stable gain, thereby reducing the number of stages needed

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs dynamic impedance matching networks that are optimized for simultaneous conjugate matching, allowing the amplifier to adaptively achieve maximum power transfer and gain while minimizing losses, thus reducing the need for additional amplifier stages

Inventive Principle:
Principle #15Dynamics

2Reliability

If the number of amplifier stages is increased to compensate for passive component losses, then the gain is improved, but the chip size increases

Engineering Contradiction:
ImprovegainVSAvoidchip size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent transforms the amplifier parameters through double-gain boosting to achieve maximum available gain greater than the transistor's maximum stable gain, reducing the number of stages required and thus the chip area

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent combines multiple functions into a single amplifier stage by integrating simultaneous conjugate matching networks with the gain boosting mechanism, achieving both maximum power transfer and high gain in one compact configuration

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If simultaneous conjugate matching is implemented at both input and output ports, then the maximum available gain is improved, but the design complexity increases

Engineering Contradiction:
Improvemaximum available gainVSAvoiddesign complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent divides the impedance matching design into two independent but coordinated parts: input port conjugate matching and output port conjugate matching, each optimized separately and then integrated through the double-gain boosting framework

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses feedback analysis to establish the relationship between input and output matching conditions, ensuring that the simultaneous conjugate matching at both ports achieves maximum available gain while maintaining design tractability through systematic parameter transformation

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12206368B2High-gain amplifier based on dual-gain boosting
Publication Date: 2025.01.21 KOREA ADVANCED INST OF SCI & TECH
  • US12206368B2 patent drawing
  • US12206368B2 patent drawing
  • US12206368B2 patent drawing

AI summary

Provided is a high-gain amplifier based on double-gain boosting including a first gain amplification unit including a first amplifier, a second amplifier, and a an interstage matching network connected between the first amplifier and the second amplifier and performing primary amplification; and a second gain amplification unit connected in parallel with the first gain amplification unit and performing secondary boosting.