Dual Gas Supply Plasma Etching for Layer Selectivity Control
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Solution Overview
Problem
Current substrate processing technologies face challenges in controlling the etching selectivity of different materials during the semiconductor manufacturing process, particularly in achieving precise etching of various layers such as silicon (Si), silicon-germanium (SiGe), SiO2, and Si3N4 without particle contamination.
Innovation Solution
A substrate processing apparatus and method that utilize separate gas suppliers to generate and control the ratio of first and second source gases in a plasma space and processing space, respectively, allowing for precise etching of different etch target layers by adjusting the ratio of second source gas to first source gas, thereby controlling the etching selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gas supplier is used to supply process gas for etching multiple different layers, then the device complexity is reduced, but the etching selectivity control between different materials becomes insufficient
Solution Approach 1:
The gas supplier system is segmented into a first gas supplier for supplying first source gas to the plasma space and a second gas supplier for supplying second source gas to the processing space. This segmentation allows independent control of gas flows for different etching targets, enabling precise selectivity control between different material layers while maintaining manageable device complexity through modular architecture.
2Ease of operation
If the ratio of different source gases is not controlled, then the gas supply system is simpler to operate, but the etching selectivity between different layers cannot be precisely controlled
Solution Approach 1:
The system controls the ratio of second source gas to first source gas supplied to the processing space to precisely adjust etching selectivity. By varying gas flow parameters independently through separate gas suppliers, the system achieves precise control over etching rates for different materials while maintaining ease of operation through automated ratio control mechanisms.
3Manufacturing precision
If separate gas suppliers are used to control etching selectivity, then the etching precision for different layers is improved, but the device complexity increases
Solution Approach 1:
The gas supplier system is divided into functionally distinct first and second gas suppliers, each optimized for specific gas delivery requirements. This segmentation enables precise control of gas ratios for different etching targets, achieving superior etching selectivity while managing device complexity through modular, independently controllable units with standardized interfaces.
4Reliability
If particle contamination occurs during etching, then the etching process cannot proceed, but preventing particle contamination requires additional processing steps that reduce productivity
Solution Approach 1:
The system extracts and removes particles from the process gas through filtration systems integrated into the gas supply pathways. By removing particles before the gas reaches the processing space, the system ensures particle-free etching conditions without requiring additional processing steps during the etching operation, thereby maintaining high productivity while achieving reliable particle-free processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and controlled etching of multiple layers with reduced particle contamination, improving the selectivity and efficiency of the etching process, which is critical for semiconductor device manufacturing.
Implementation Method 1
an electromagnetic field is formed in an internal space of a chamber and excites process gas provided in the chamber to a plasma state. Plasma refers to an ionized gas state including ions, electrons, radicals, and the like. Plasma is generated by very high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields.
Implementation Method 2
the first source gas supplies first process gas for etching a first etch target layer in the processing space
Implementation Method 3
the second source gas supplies second process gas to the processing space, the first process gas etches the first etch target layer, the second process gas etches the second etch target layer
Data Source
AI summary
A substrate processing apparatus includes a plasma space, a processing space, a first gas supplier configured to supply first source gas to the plasma space, and a second gas supplier configured to supply second process gas to the processing space. The first source gas supplies first process gas for etching a first etch target layer in the processing space. The second process gas etches a second etch target layer in the processing space. The first gas supplier and the second gas supplier are separated from each other.