Dual Gas Supply Layout for Silicon Nitride Thickness Control
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Solution Overview
Problem
Existing substrate processing techniques face challenges in achieving precise control over the thickness distribution of films formed on substrates, particularly in semiconductor device manufacturing, as they often result in non-uniform thickness across the substrate, making it difficult to achieve desired film distributions.
Innovation Solution
A substrate processing apparatus is designed with a dual gas supply system that includes a first gas supply system for silicon-containing gases and a second gas supply system for nitriding gases, where the gases are supplied in a non-simultaneous cycle using different directions and pressures to enhance control over film thickness, allowing for the formation of silicon nitride films with improved controllability and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional single gas supply system is used to form films on substrates, then the manufacturing process is simple, but the thickness distribution of the film is non-uniform and difficult to control
Solution Approach 1:
The gas supply system is divided into multiple independent gas supply ports (first gas supply port and second gas supply port), each capable of supplying gas from different directions and at different flow rates. This segmentation allows independent control of gas distribution across different regions of the substrate, enabling precise control over film thickness distribution without requiring a completely complex integrated system.
Solution Approach 2:
Different gas supply ports are configured with different gas supply directions, flow rates, and timing to address local thickness variation needs. The first gas supply port supplies gas from a first direction with a first flow rate, while the second gas supply port supplies gas from a second direction with a second flow rate, allowing localized adjustment of film deposition characteristics in different substrate regions.
2Manufacturing precision
If gas is supplied simultaneously from multiple directions to form film, then the deposition speed is high, but the thickness uniformity deteriorates
Solution Approach 1:
The gas supply system operates in periodic cycles where the first gas supply port and second gas supply port supply gas alternately rather than simultaneously. During each cycle, one port supplies gas while the other is closed, and this pattern repeats over multiple cycles. This periodic action ensures uniform thickness distribution by controlling gas flow sequences while maintaining overall deposition productivity through continuous cycling.
3Adaptability or versatility
If the gas supply direction is fixed toward the substrate center, then the equipment structure is simple, but the thickness distribution controllability is insufficient
Solution Approach 1:
The gas supply system employs asymmetric gas supply configurations where the first gas supply port and second gas supply port are positioned and oriented differently relative to the substrate. The first port supplies gas from a first direction while the second port supplies gas from a second direction, creating asymmetric gas flow patterns that enable control over various thickness distribution profiles (central convex, central concave, or flat) without requiring complex adjustable mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise adjustment of film thickness distribution, enabling the formation of silicon nitride films with desired thickness and composition, improving uniformity and controllability across the substrate, and facilitating the transition between different thickness distributions such as central convex, flat, and central concave profiles.
Implementation Method 1
a first gas supply system configured to supply a first process gas containing a predetermined element into the process chamber
Implementation Method 2
a second gas supply system configured to supply a second process gas whose chemical structure is different from that of the first process gas into the process chamber
Data Source
AI summary
Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.