Dual-Gate BioFET Sensor Structure for Label-Free Biomolecule Detection
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Solution Overview
Problem
Existing biosensor systems face challenges in efficiently detecting and quantifying biomolecules without the need for costly and time-consuming labeling processes, particularly in the context of semiconductor-based biosensors.
Innovation Solution
The development of dual-gate back-side sensing FET sensors, which utilize semiconductor manufacturing techniques and biological capture reagents to enable label-free detection of biomolecules, utilizing two gate structures for precise conductivity changes indicative of bio-recognition reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional biosensor systems use labeling processes for detection, then detection accuracy can be improved, but manufacturing cost and time consumption increase significantly
Solution Approach 1:
The patent extracts and eliminates the labeling process from the biosensing system by implementing label-free detection using FET sensors. The biosensor directly detects biomolecules through their intrinsic electrical properties without requiring external labels, thereby removing the time-consuming and costly labeling steps while maintaining detection capability through the FET's sensitivity to charge changes near the channel region
Solution Approach 2:
The patent replaces the mechanical/chemical labeling process with an electrical detection mechanism. Instead of using physical labels attached to biomolecules, the FET sensor uses its electric field to detect the presence and properties of biomolecules based on their charge characteristics, substituting a complex mechanical labeling system with a simpler electrical sensing approach
2Measurement precision
If conventional biosensor systems use labeling processes for detection, then detection accuracy can be improved, but manufacturing cost increases
Solution Approach 1:
The patent extracts and eliminates the labeling process from the biosensing system by implementing label-free detection using FET sensors. The biosensor directly detects biomolecules through their intrinsic electrical properties without requiring external labels, thereby removing the time-consuming and costly labeling steps while maintaining detection capability through the FET's sensitivity to charge changes near the channel region
Solution Approach 2:
The patent employs a disposable FET sensor platform that can be manufactured using standard semiconductor fabrication techniques. The sensors are designed to be cost-effective and potentially single-use, eliminating the need for expensive labeling reagents and complex sample preparation while maintaining adequate detection performance for the application
3Productivity
If dual-gate back-side sensing FET sensors are used for label-free detection, then manufacturing cost and time are reduced, but sensor structure complexity increases
Solution Approach 1:
The patent divides the FET sensor into two separate gates: a front gate for controlling the channel conductivity and a back gate for sensing biomolecules. This segmentation allows each gate to perform its specific function independently, simplifying the overall sensor operation despite the increased structural complexity. The back-side sensing configuration further segments the sensing function to the substrate interface where biomolecules naturally accumulate
Solution Approach 2:
The dual-gate FET structure provides multi-functionality by enabling both channel control and biomolecule sensing within a single device. The front gate maintains standard FET operation for current control, while the back gate adds sensing capability without requiring separate detection devices, thereby improving productivity while managing complexity through integrated multi-functionality
4Productivity
If labeling processes are eliminated in biosensing, then manufacturing cost and time are reduced, but detection sensitivity may be compromised
Solution Approach 1:
The patent replaces the mechanical/chemical labeling process with an electrical detection mechanism. Instead of using physical labels attached to biomolecules, the FET sensor uses its electric field to detect the presence and properties of biomolecules based on their charge characteristics, substituting a complex mechanical labeling system with a simpler electrical sensing approach
Solution Approach 2:
The patent changes the detection parameter from optical or chemical signals (used in labeled detection) to electrical signals. By measuring changes in FET channel current or threshold voltage caused by biomolecule proximity, the system achieves label-free detection with comparable sensitivity, improving manufacturing efficiency while maintaining measurement precision through parameter transformation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dual-gate back-side sensing FET sensors facilitate efficient, cost-effective, and rapid detection of biomolecules by eliminating the need for labeling operations, enhancing the sensitivity and specificity of biosensing applications.
Implementation Method 1
The channel region is surrounded by a sensing layer which may be functionalized to provide specificity for a target analyte. In operation, the FET sensor can detect analytes that bind to the sensing layer by measuring changes in conductivity in the channel region.
Implementation Method 2
dual-gate back-side sensing FET sensors, which utilize semiconductor manufacturing techniques and biological capture reagents to enable label-free detection of biomolecules, utilizing two gate structures for precise conductivity changes indicative of bio-recognition reactions.
Data Source
AI summary
The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.