Dual Gate Electrode Fabrication with In-Situ Capping Layer Removal
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Solution Overview
Problem
Current methods for fabricating semiconductor device electrode structures face challenges in achieving improved electrical characteristics and increased productivity due to issues with pattern size reduction and reliability, particularly in the formation and integration of gate electrodes.
Innovation Solution
A method involving the formation of a first gate electrode, removal of the electrode capping layer, growth of a second gate electrode using the top surface of the first gate electrode as a seed, and subsequent nitridation of the second gate electrode, utilizing a specialized apparatus with plasma and gas supply systems to enhance the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to fabricate gate electrodes, then manufacturing process is simpler, but electrical characteristics and reliability are insufficient
Solution Approach 1:
The gate electrode fabrication is divided into multiple sequential steps: forming a first gate electrode, removing its capping layer, forming a second gate electrode on the exposed surface, and nitridating the second gate electrode. This segmentation allows each step to be optimized independently, improving overall electrical characteristics while maintaining manageable process complexity through systematic breakdown.
Solution Approach 2:
The first gate electrode is formed and its capping layer is removed in advance to create a prepared surface that serves as a seed layer for the second gate electrode. This preliminary action ensures optimal surface conditions for subsequent electrode formation, improving adhesion and electrical characteristics without adding complexity to the final assembly step.
2Manufacturing precision
If pattern size is reduced to increase integration density, then device size decreases, but manufacturing precision and reliability become more difficult to maintain
Solution Approach 1:
Different regions of the gate electrode structure are given different properties: the first gate electrode provides a stable base layer, while the second gate electrode formed on its exposed surface provides enhanced electrical characteristics. The nitridation process specifically treats the upper portion of the second gate electrode to improve its electrical properties. This local differentiation maintains high precision and reliability even as overall pattern sizes are reduced for increased integration density.
3Productivity
If multiple processing steps are performed separately, then each step can be optimized, but productivity decreases due to longer fabrication time
Solution Approach 1:
The formation of the first gate electrode, removal of its capping layer, and formation of the second gate electrode are integrated into a continuous in-situ process sequence. The second gate electrode is formed directly on the exposed surface of the first gate electrode without intermediate handling or exposure to ambient conditions. This merging of steps maintains electrical characteristics and manufacturing precision while reducing overall fabrication time and improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves electrical characteristics and reduces fabrication failures by exposing the top surface of the first gate electrode, allowing for easier formation of the second gate electrode and enhancing productivity through in-situ processing, thereby improving the overall integration density and reliability of semiconductor devices.
Implementation Method 1
a shower head configured to provide plasma to the plate, a plasma box configured to provide the plasma to the shower head
Implementation Method 2
The plate may include a heater
Implementation Method 3
a shower head configured to supply an etchant and an interface forming gas toward the plate
Data Source
AI summary
A method of fabricating an electrode structure may include forming a first gate electrode, performing a removal process on an electrode capping layer formed on the first gate electrode, forming a second gate electrode on the first gate electrode, and nitridating an upper portion of the second gate electrode.