Dual-Gate Semiconductor Circuits for Stable Display Signals
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Variations in transistor threshold voltage in sequence circuits of driver circuits lead to failures in outputting desired signals, affecting display quality and reliability in display devices.
Innovation Solution
A semiconductor device design incorporating transistors with overlapping gates and capacitors, utilizing specific wiring potentials to stabilize transistor operation and suppress threshold voltage variations, thereby enhancing reliability and reducing bezel width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If transistors are used in sequence circuits of driver circuits, then the driver circuit can be formed on the same substrate as the pixel portion (system-on-panel), but variations in transistor threshold voltage lead to failures in outputting desired signals
Solution Approach 1:
The patent combines multiple gates (first gate and second gate) on a single transistor to create a multi-gate structure. This merging of gate controls allows for independent adjustment of threshold voltage and operation control, enabling the transistor to function reliably in sequence circuits while maintaining system-on-panel integration. The first gate controls threshold voltage and the second gate controls operation, providing dual functionality that resolves the reliability issue.
Solution Approach 2:
The patent changes the electrical parameters of the transistor by applying different potentials to the first gate and second gate. By independently controlling the threshold voltage through the first gate and the operation state through the second gate, the transistor can maintain stable signal output despite variations in manufacturing. This parameter control mechanism ensures reliable signal output in sequence circuits.
2Length of stationary object
If driver circuits are formed on the same substrate as pixel portion, then bezel width can be narrowed, but manufacturing precision requirements increase due to threshold voltage variations
Solution Approach 1:
The patent merges multiple gate structures into a single transistor to provide independent control mechanisms. The first gate and second gate work together to control different aspects of transistor operation, allowing for precise threshold voltage adjustment without requiring extremely tight manufacturing tolerances. This structural merging compensates for manufacturing variations.
Solution Approach 2:
The patent implements a feedback mechanism where the first gate controls the threshold voltage based on the operational requirements. By monitoring and adjusting the threshold voltage through the first gate, the system can compensate for manufacturing variations and ensure consistent transistor performance across the substrate, reducing the impact of precision requirements.
3Ease of manufacture
If single polarity transistors are used in driver circuits, then fabrication costs are reduced, but the ability to output stable pulse signals is compromised due to threshold voltage variations
Solution Approach 1:
The patent combines multiple gate controls on a single transistor to provide both threshold voltage control and operation control. This merged structure allows single polarity transistors to achieve stable pulse signal output by independently adjusting the threshold voltage through the first gate and controlling the operation state through the second gate, maintaining ease of manufacture while improving reliability.
Solution Approach 2:
The patent changes the operational parameters of the single polarity transistor by applying controlled potentials to the first gate and second gate. This parameter control allows the transistor to output stable pulse signals despite being a single polarity device, maintaining the fabrication cost advantage while achieving the required signal stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves high reliability and reduced bezel width in semiconductor and display devices, with stable signal output and reduced manufacturing costs.
Implementation Method 1
using a bootstrap effect to maintain output voltage without threshold voltage shifts
Implementation Method 2
a first gate and a second gate that overlap with each other with the first semiconductor layer therebetween
Data Source
AI summary
A semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and first to fourth wirings. The first transistor includes a first gate and a second gate, and one of a source and a drain of the first transistor is connected to the first wiring and the second gate, and the other of the source and the drain is connected to one of a source and a drain of the second transistor and one electrode of the capacitor. A gate of the second transistor is connected to the other electrode of the capacitor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring. The first wiring is supplied with a first potential, and the second wiring is supplied with a second potential and a third potential alternately. The third wiring is connected to the first gate and supplied with a first signal. The fourth wiring is connected to the gate of the second transistor and supplied with a second signal obtained by inverting the first signal.