Dual-Gate Semiconductor Circuit for Stable Display Driver Output

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Solution Overview

Problem

Variations in transistor threshold voltage in sequence circuits of driver circuits of display devices lead to failures in outputting desired signals, affecting image display and increasing bezel size and manufacturing costs.

Innovation Solution

A semiconductor device incorporating transistors with overlapping gates and capacitors, where one gate is connected to the source, stabilizes the threshold voltage, enabling reliable and efficient signal output without additional power supplies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional sequence circuits are used with single-polarity transistors, then fabrication costs are reduced and manufacturing is simplified, but threshold voltage variations cause signal output failures

Engineering Contradiction:
Improvesignal output reliabilityVSAvoidtransistor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gate electrode is divided into two separate gates (first gate and second gate) that can be independently controlled. This segmentation allows independent optimization of threshold voltage control and signal drive capability, resolving the contradiction between reliability and complexity by making the threshold voltage controllable without requiring a completely new transistor architecture

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention changes the electrical parameters of the transistor by introducing a second gate that can independently control the threshold voltage. By adjusting the voltage applied to the second gate, the threshold voltage can be dynamically tuned to compensate for variations, improving signal output reliability without fundamentally changing the transistor's basic structure

Inventive Principle:
Principle #35Parameter changes

2Length of stationary object

If driver circuits are integrated over the same substrate as pixel portions, then bezel size is narrowed, but threshold voltage variations in sequence circuits affect image display

Engineering Contradiction:
Improvebezel widthVSAvoidimage display reliability
Core Design Contradiction:
Length of stationary objectVSReliability

Solution Approach 1:

The second gate serves as a threshold voltage control terminal that can dynamically adjust the transistor's operating characteristics. By monitoring and adjusting the threshold voltage through the second gate, the circuit maintains reliable signal output even when integrated on the same substrate, ensuring image display reliability while achieving narrowed bezel

Inventive Principle:
Principle #35Parameter changes

3Reliability

If transistors with overlapping gates are used to stabilize threshold voltage, then signal output reliability is improved, but transistor structure and fabrication complexity increase

Engineering Contradiction:
Improvethreshold voltage stabilityVSAvoidfabrication ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The gate is segmented into two independent gates that can be formed using standard multi-layer conductor fabrication techniques. This segmentation approach allows the dual-gate structure to be integrated into existing manufacturing processes without requiring completely new fabrication equipment or methods, thereby maintaining ease of manufacture while achieving threshold voltage stability

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20260033001A1Semiconductor device, display device, and electronic device
Publication Date: 2026.01.29 SEMICON ENERGY LAB CO LTD
  • US20260033001A1 patent drawing
  • US20260033001A1 patent drawing
  • US20260033001A1 patent drawing

AI summary

A semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and first to fourth wirings. The first transistor includes a first gate and a second gate, and one of a source and a drain of the first transistor is connected to the first wiring and the second gate, and the other of the source and the drain is connected to one of a source and a drain of the second transistor and one electrode of the capacitor. A gate of the second transistor is connected to the other electrode of the capacitor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring. The first wiring is supplied with a first potential, and the second wiring is supplied with a second potential and a third potential alternately. The third wiring is connected to the first gate and supplied with a first signal. The fourth wiring is connected to the gate of the second transistor and supplied with a second signal obtained by inverting the first signal.