Dual Gate Oxide Micro-OLED Transistor for High Voltage Uniformity

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Solution Overview

Problem

Existing micro-OLED displays face a dilemma in gate oxide selection, as thinner gate oxides improve uniformity but are susceptible to breakdown under high voltage, while thicker gate oxides enhance reliability but may compromise uniformity and performance.

Innovation Solution

The implementation of a dual gate oxide drive transistor design, which includes a thin gate oxide for better control and uniformity and a thicker gate oxide in the gate-to-drain overlap region to tolerate high voltage, allowing for both high uniformity and high voltage operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a thinner gate oxide is used, then uniformity and control over channel current are improved, but the transistor becomes susceptible to breakdown under high voltage

Engineering Contradiction:
ImproveuniformityVSAvoidbreakdown resistance
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent implements a dual gate oxide structure where the first gate oxide layer has a first thickness and the second gate oxide layer has a second thickness greater than the first thickness. This local differentiation allows the thinner first gate oxide to provide superior uniformity and control in the channel region, while the thicker second gate oxide provides enhanced breakdown resistance in the gate-to-drain overlap region, resolving the contradiction between uniformity and reliability.

Inventive Principle:
Principle #3Local quality

2Reliability

If a thicker gate oxide is used, then reliability and breakdown resistance are improved, but uniformity and performance are compromised

Engineering Contradiction:
Improvebreakdown resistanceVSAvoiduniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies different gate oxide thicknesses to different spatial regions: the first gate oxide layer with thinner thickness provides uniform control where needed, while the second gate oxide layer with thicker thickness provides breakdown protection in the gate-to-drain overlap region. This localized quality differentiation resolves the contradiction between reliability and uniformity.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The gate oxide structure is segmented into two distinct layers with different thicknesses. The first gate oxide layer and second gate oxide layer are formed separately with controlled thicknesses, allowing independent optimization of uniformity and breakdown resistance in different regions, thus resolving the contradiction between these competing requirements.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250189827A1Apparatuses and methods for optical systems
Publication Date: 2025.06.12 META PLATFORMS TECHNOLOGIES LLC
  • US20250189827A1 patent drawing
  • US20250189827A1 patent drawing
  • US20250189827A1 patent drawing

AI summary

Systems and methods for enabling higher uniform performance and higher voltage operation for micro-OLED displays, manufacturing a meniscus lens including thermo-forming a functional optical layer and printing a lens element over the formed functional optical layer, using a hybrid process used to form a functionalized lens having a controlled surface profile, modeling the polarization properties of a human eye using a polymer thin film, and improving optical sparce eye-tracking by collecting an optical output signal from each detector through a corresponding optical fiber, and determining a gaze direction of a user's eye based on the electrical signal may be disclosed.