Dual-Gate Oxide Semiconductor Transistor Back Gate Control
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Solution Overview
Problem
Silicon transistors face stability issues in high-temperature environments, leading to potential malfunctions in electronic devices used in vehicles and other high-temperature applications.
Innovation Solution
A signal processing circuit with dual-gate transistors and a back gate voltage control circuit is designed to operate n-channel transistors with specific current-voltage characteristics, ensuring stable performance in high-temperature conditions by adjusting the back gate potential for optimal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon transistors are used in high-temperature environments, then device complexity and manufacturing ease are maintained, but stability and reliability deteriorate
Solution Approach 1:
The patent applies parameter changes by adjusting the back gate potential of the transistor to control its current-voltage characteristics. By changing the electrical parameter (back gate potential), the transistor can operate stably at high temperatures without requiring a complete material change, thus resolving the contradiction between reliability and temperature.
Solution Approach 2:
The invention implements dynamics by making the transistor's characteristics adjustable through the back gate voltage control circuit. This dynamic adjustment capability allows the transistor to adapt to high-temperature conditions, improving reliability while maintaining operation at elevated temperatures.
2Power
If back gate potential is adjusted for optimal conductivity, then electrical conductivity is improved, but device complexity increases
Solution Approach 1:
The back gate voltage control circuit serves multiple functions: it adjusts the current-voltage characteristics of the transistor, enables high-temperature operation, and optimizes power consumption. This multi-functionality reduces the need for separate circuits for each function, thereby limiting the increase in overall device complexity while achieving improved conductivity.
3Adaptability or versatility
If transistors operate in high-temperature environments, then adaptability to various applications is improved, but power consumption increases
Solution Approach 1:
By changing the back gate potential parameter, the transistor can be optimized for different operating conditions including high-temperature environments. This parameter adjustment allows the device to maintain lower power consumption across various applications while adapting to different temperature conditions, resolving the contradiction between adaptability and power consumption.
Data Source
AI summary
Provided is a semiconductor device that can operate stably. All transistors included in the semiconductor device are transistors each of which contains an oxide semiconductor in a channel formation region. The transistor includes a front gate and a back gate. The threshold voltage of the transistor can be shifted in the positive direction or the negative direction depending on a potential applied to the back gate. To make the transistor in a conducting state, the threshold voltage is shifted in the negative direction to increase the amount of current flowing in the transistor, and to make the transistor in a non-conducting state, the threshold voltage is shifted in the positive direction to decrease the amount of current flowing in the transistor. A circuit of the semiconductor device that utilizes this effect and includes transistors all having the same polarity is formed.