Dual-Gate Semiconductor Circuits for Low-Power Product-Sum Computing

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Solution Overview

Problem

The increasing number of circuits and layers in artificial neural networks leads to high power consumption and heat generation, affecting the performance and stability of semiconductor devices.

Innovation Solution

A semiconductor device incorporating transistors and capacitors with specific gate connections and potential control mechanisms to perform arithmetic operations in a hierarchical neural network with reduced power consumption and temperature sensitivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the number of circuits and layers in artificial neural networks is increased to improve processing capability, then productivity is improved, but power consumption increases

Engineering Contradiction:

Improveprocessing capabilityVSAvoidpower consumption

Core Design Contradiction:

ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent combines multiple functions into a single circuit element. The first transistor with dual gates integrates switching control and signal modulation functions, while the first capacitor serves both as a charge storage element and a potential holding mechanism. This merging reduces the total number of discrete components needed, thereby lowering power consumption while maintaining processing capability.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The first transistor is designed with universal functionality where the first gate controls switching operations and the second gate modulates the channel potential. This multi-functional design allows a single transistor to perform multiple operations that would traditionally require separate components, reducing overall power consumption in the neural network circuit.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Productivity

If the number of circuits and layers in artificial neural networks is increased to improve processing capability, then productivity is improved, but heat generation increases

Engineering Contradiction:

Improveprocessing capabilityVSAvoidheat generation

Core Design Contradiction:

ProductivityVSTemperature

Solution Approach 1:

By merging multiple functions into the first transistor with dual gates and the first capacitor, the patent reduces the total component count. Fewer components mean fewer sources of heat generation, allowing the device to maintain higher processing capability without excessive temperature rise.

Inventive Principle:

Principle #5Merging (Combining)

3Productivity

If the number of circuits and layers in artificial neural networks is increased to improve processing capability, then productivity is improved, but temperature sensitivity increases

Engineering Contradiction:

Improveprocessing capabilityVSAvoidtemperature sensitivity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent replaces traditional voltage-controlled switching mechanisms with a dual-gate transistor system that uses potential control. The second gate of the first transistor controls the potential at the first terminal of the first capacitor, creating a more stable electrical field that is less susceptible to temperature fluctuations. This substitution enhances reliability while maintaining high processing capability.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device achieves low power consumption and reduced temperature sensitivity, enabling efficient operation of hierarchical artificial neural networks.

Implementation Method 1

The first transistor includes a first gate and a second gate. The first gate of the first transistor is electrically connected to a first input wiring. The second gate of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitor.

Methodology Applied

Scientific EffectField effect transistor operation: Conduction (electrical)

Implementation Method 2

The first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitor. The first circuit has a function of holding a first potential of the first terminal of the first capacitor

Methodology Applied

Scientific EffectCapacitance: Capacitance

Data Source

PatentUS12453072B2Semiconductor device that can perform product-sum operation with low power consumption

Publication Date: 2025.10.21 SEMICON ENERGY LAB CO LTD

AI summary

A semiconductor device that can perform product-sum operation with low power consumption is provided. The semiconductor device includes first and second circuits. The first circuit includes a first holding node and the second circuit includes a second holding node. The first circuit is electrically connected to first and second input wirings and first and second wirings, the second circuit is electrically connected to the first and second input wirings and the first and second wirings, and the first and second circuits have a function of holding first and second potentials corresponding to first data at the first and second holding nodes. When potentials corresponding to second data are input to the first and second input wirings, the first circuit outputs a current to one of the first wiring and the second wiring, and the second circuit outputs a current to the other of the first wiring and the second wiring. The currents output by the first and second circuits to the first wiring and the second wiring are determined in accordance with the first and second potentials held at the first and second nodes.