Dual Gate III-V Switch for High Voltage Relay Control

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Solution Overview

Problem

Solid state relays and switches face challenges in controlling gate voltage due to varying source and drain voltages, leading to complex and costly circuit designs, increased capacitance, and slowed operation at higher speeds.

Innovation Solution

An electronic relay design featuring a shared drift region operationally coupled with two photo-switches, each responsive to different wavelengths of light, allowing for independent control of conductivity without the need for complex voltage matching, utilizing a 2-dimensional electron gas and ohmic contacts for efficient switching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If gate voltage is controlled to match varying source/drain voltages, then switching functionality is maintained, but control circuit complexity and cost increase

Engineering Contradiction:
Improveswitching functionalityVSAvoidcontrol circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the gate control function with the source/drain voltage sensing function into a single integrated structure. The gate electrode is positioned to simultaneously sense the source/drain voltage and control the channel conductivity, eliminating the need for separate control circuits that would otherwise be required to match gate voltage to varying source/drain voltages.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The gate electrode serves multiple functions: it acts as both the control electrode for modulating channel conductivity and as a voltage-sensing element that automatically detects source/drain voltage levels. This multi-functionality allows the gate to adapt to varying voltages without requiring additional dedicated control circuitry.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Power

If control circuit voltage increases to match source/drain voltage, then high voltage switching capability is achieved, but circuit component size and capacitance increase

Engineering Contradiction:
Improvevoltage capabilityVSAvoidcircuit component size
Core Design Contradiction:
PowerVSQuantity of substance

Solution Approach 1:

The patent extracts the voltage-sensing function from the control circuit and integrates it directly into the gate electrode structure. By taking out the separate voltage-matching control circuitry and embedding the sensing capability within the gate itself, the design achieves high voltage capability without requiring additional voltage-dependent control components that would increase size and capacitance.

Inventive Principle:
Principle #2Taking out (Extraction)

3Power

If control circuit capacitance increases due to higher voltage components, then high voltage handling is improved, but switching speed decreases

Engineering Contradiction:
Improvevoltage handlingVSAvoidswitching speed
Core Design Contradiction:
PowerVSSpeed

Solution Approach 1:

The patent merges the gate control electrode with the voltage-sensing function, creating an integrated structure that eliminates separate high-voltage control circuit components. This integration reduces the total capacitance associated with control circuitry while maintaining the ability to handle high voltages, thereby preserving fast switching speeds.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enables rapid switching with reduced capacitance, improving speed and power/voltage capability, and simplifies control circuitry, allowing for high-speed operation even with varying voltages.

Implementation Method 1

Some solid state relays/switches can require that the voltage applied to the component switches or gates be related to the voltage applied to the source and/or drain contacts

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

the drift region comprises a 2-dimensional electron cloud ('2DEG')

Methodology Applied
Scientific EffectPhotoconductivity: Photoconductivity

Data Source

PatentUS10447261B1Dual gate III-switch for high voltage current relay
Publication Date: 2019.10.15 HRL LAB
  • US10447261B1 patent drawing
  • US10447261B1 patent drawing
  • US10447261B1 patent drawing

AI summary

Photo-switchable relays and switches and dual gate III-switches having a photo switchable normally-off region located in the channel layer of the device are disclosed where irradiation of the normally-off regions with an appropriate wavelength of radiation results in generation of charge carriers and the flow of electricity through the device being turned on and off in response to the radiation being turned on and off.