Dual Gate Structures with Oxidized Conductive Layers
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Solution Overview
Problem
Reliable manufacturing and integration of dual metal gates with different work functions in semiconductor devices is challenging due to etch-induced damage to high-K dielectric materials in conventional methods.
Innovation Solution
A method involving the formation of dual gate structures with high-K dielectric materials and conductive layers, where a conductive material layer is converted to a dielectric layer over one region, allowing for the formation of gate stacks with different work functions without direct etching, thereby minimizing damage to the high-K dielectric material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional etching methods are used to form dual metal gates, then different work functions can be achieved, but etch-induced damage occurs to the high-K dielectric material
Solution Approach 1:
A conductive material layer is formed over the high-K dielectric material before the metal layers are deposited. This preliminary conductive layer serves as a protective barrier during subsequent processing steps, preventing direct contact between etchants and the high-K dielectric material, thereby avoiding etch-induced damage while still enabling dual metal gate formation with different work functions
Solution Approach 2:
The conductive material layer acts as an intermediary between the high-K dielectric material and the metal layers. This intermediate layer facilitates the formation of dual metal gates with different work functions while protecting the underlying high-K dielectric from harmful etching effects, thus resolving the contradiction between achieving functional differentiation and preventing material damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the reliable integration of dual gate structures with minimal damage to high-K dielectric materials, facilitating the production of next-generation memory devices with improved performance.
Implementation Method 1
oxidizing a portion of the first conductive material layer to convert the portion of the first conductive material layer to a dielectric material layer
Data Source
AI summary
Semiconductor devices including dual gate structures and methods of forming such semiconductor devices are disclosed. For example, semiconductor devices are disclosed that include a first gate stack that may include a first conductive gate structure formed from a first material, and a second gate stack that may include a dielectric structure formed from an oxide of the first material. For another example, methods including forming a high-K dielectric material layer over a semiconductor substrate, forming a first conductive material layer over the high-K dielectric material layer, oxidizing a portion of the first conductive material layer to convert the portion of the first conductive material layer to a dielectric material layer, and forming a second conductive material layer over both the conductive material layer and the dielectric material layer are also disclosed.