Dual Gate Transistor Circuit for Display Panel Leakage Reduction
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Solution Overview
Problem
Display panels with reduced transistor size suffer from insufficient charging and lowered circuit driving capability, affecting image display quality due to insufficient working current and increased leakage current in idle states.
Innovation Solution
A dual gate transistor circuit incorporating a dual gate transistor with series-connected diodes of opposite polarity directions to adjust voltage differences between gates, enhancing working current in the active state and reducing leakage current in the idle state.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the transistor size is reduced to increase aperture ratio and narrow borders, then the display region is improved, but the charging capability and circuit driving capability are insufficient
Solution Approach 1:
The gate terminal is divided into two separate gates (first gate and second gate) with independent control capabilities. This segmentation allows independent optimization of each gate's function - the first gate controls the main channel while the second gate modulates the threshold voltage, enabling the transistor to achieve both high driving capability and compact size without compromising either aspect
Solution Approach 2:
The patent introduces a voltage difference parameter between the two gates to control the transistor's operating state. By adjusting the voltage difference between the first gate and second gate, the threshold voltage can be dynamically modified, allowing the transistor to operate with high current drive capability in active state while maintaining compact dimensions
2Area of stationary object
If the transistor size is reduced, then the display region is improved, but the working current is insufficient
Solution Approach 1:
The gate control function is segmented into two independent gates, allowing the first gate to provide primary conduction control while the second gate independently adjusts the threshold voltage. This segmentation enables the transistor to maintain high working current despite reduced size by optimizing each gate's contribution separately
Solution Approach 2:
The patent creates a dynamic control mechanism where the voltage difference between the two gates can be adjusted in real-time. This dynamic adjustment allows the transistor to optimize its current drive capability during active operation while maintaining compact size, as the threshold voltage can be tuned according to operational requirements
3Area of stationary object
If the transistor size is reduced, then the display region is improved, but the leakage current increases in idle state
Solution Approach 1:
By segmenting the gate control into two independent gates, the patent enables separate optimization of conduction and leakage control. The second gate specifically functions to adjust the threshold voltage, which can be used to reduce leakage current in idle state while the first gate maintains adequate conduction during active operation, thus addressing the leakage issue without sacrificing aperture ratio
Solution Approach 2:
The patent utilizes voltage difference parameter between the two gates to dynamically control the threshold voltage. By adjusting this voltage difference, the transistor can be configured to have higher threshold voltage in idle state to reduce leakage current, while maintaining lower threshold during active state for adequate current drive, thus resolving the leakage problem without compromising size benefits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases working current in the active state and reduces leakage current in the idle state, thereby improving the overall performance and display quality of the display panel.
Implementation Method 1
a voltage difference between the first gate and the second gate of the dual gate transistor may be determined according to the turning on or turning off state of the diodes
Data Source
AI summary
A dual gate transistor circuit, a pixel circuit, and a gate drive circuit are provided. The dual gate transistor circuit includes a dual gate transistor, a first diode, and a second diode. The dual gate transistor has a first gate and a second gate, and the first gate receives a drive signal. The first diode is connected in series between the first gate and the second gate according to a first-polarity direction. The second diode is connected in series between the first gate and the second gate according to a second-polarity direction. The first-polarity direction is opposite to the second-polarity direction.