Dual Heater Substrate Temperature Uniformity Control
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Solution Overview
Problem
In semiconductor device manufacturing, plasma processes on substrates often result in non-uniform surface temperatures, leading to substrate warping and reduced plasma process uniformity due to inadequate heating control.
Innovation Solution
A substrate processing apparatus with a combination of a first heater for the substrate and a second heater for the outer periphery, along with a plasma generator, is used to control the temperature within a predetermined range, ensuring uniformity by adjusting the temperature of the second heater to be higher than the first heater during the plasma process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a plasma process is performed on the substrate, then the substrate surface is processed, but the surface temperature becomes non-uniform causing substrate warping
Solution Approach 1:
The heating system is segmented into two independent heating elements: a first heater that heats the substrate from below through the substrate support, and a second heater that heats the outer periphery of the substrate directly. This segmentation allows independent control of different heating zones to achieve uniform temperature distribution across the substrate surface during plasma processing.
Solution Approach 2:
Different regions of the substrate receive different heating treatments: the first heater provides uniform baseline heating across the entire substrate, while the second heater applies localized heating specifically to the outer periphery. This local quality approach compensates for edge effects and maintains temperature uniformity across the substrate surface.
2Productivity
If the substrate is heated to high temperature for plasma process, then processing efficiency improves, but substrate warping occurs due to temperature deviation
Solution Approach 1:
A temperature measurement unit continuously monitors the substrate temperature, and the controller adjusts the power supplied to both the first and second heaters based on this feedback. This closed-loop control ensures the substrate maintains the optimal temperature range for plasma processing while preventing temperature deviations that would cause warping, thus maintaining both productivity and substrate flatness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances temperature uniformity on the substrate surface, preventing warping and improving manufacturing throughput by maintaining high precision in film formation and etching processes.
Implementation Method 1
a first heater provided in the substrate support and configured to heat the substrate
Implementation Method 2
a second heater configured to heat an outer periphery of the substrate
Implementation Method 3
a plasma generator configured to activate the process gas in the process chamber
Data Source
AI summary
There is provided a technique capable of improving uniformity of surface temperature of a substrate in plasma process. According to one aspect thereof, a substrate processing apparatus includes: a process chamber; a substrate support; a first heater in the substrate support for heating a substrate; a second heater for heating an outer periphery of the substrate; a gas supplier for supplying a process gas; a plasma generator; and a controller for performing: (a) heating the substrate to at least a temperature between a first temperature and a second temperature; and (b) supplying the process gas activated by the plasma generator while setting a temperature of the second heater to be higher than that of the second heater at which (a) is performed such that a temperature deviation on a surface of the substrate is within a predetermined temperature deviation range.