Dual-ILD Source/Drain Contact Layout for Backside Power Integration
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Solution Overview
Problem
The semiconductor industry faces challenges in improving processing and manufacturing efficiency as the complexity of semiconductor integrated circuits (ICs) increases with scaling down, requiring innovative solutions to manage the complexity and efficiency of IC production.
Innovation Solution
The solution involves relocating the power network from the front-side to the backside of semiconductor devices, allowing for relaxed routing resources for both backside power and front-side signal, and utilizing advanced processes such as multi-patterning and epitaxial growth to form nanostructure channels and transistors, enabling the creation of complex semiconductor device structures like nanostructure channel FETs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the power network is located on the front-side of the semiconductor device, then the routing resources for front-side signals are sufficient, but the routing resources for backside power become constrained and complex
Solution Approach 1:
The patent moves the power network from the traditional planar front-side routing to the vertical backside of the device. This dimensional transition allows power delivery through the substrate thickness direction, effectively adding a new routing dimension that resolves the conflict between front-side signal routing and backside power routing constraints
Solution Approach 2:
Instead of routing power through the conventional front-side approach, the patent inverts the routing strategy by delivering power through the backside of the device. This inversion simplifies the overall routing architecture by separating power and signal paths into different spatial locations, reducing the complexity of power network design
2Reliability
If advanced multi-patterning and epitaxial growth processes are used to form nanostructure channels, then transistor performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the channel structure into multiple epitaxial growth stages, creating segmented nanostructure channels with different material compositions and doping profiles. This segmentation enables precise control of transistor performance characteristics while organizing the complex manufacturing process into manageable sequential steps
Solution Approach 2:
The patent performs preliminary epitaxial growth of semiconductor layers with predetermined compositions and structures before final transistor fabrication. This preliminary action establishes the nanostructure channel foundation in advance, allowing subsequent processing steps to focus on device formation rather than material synthesis, thereby managing overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances manufacturing efficiency and complexity management, leading to improved semiconductor device performance and production efficiency by simplifying the processing and manufacturing of advanced semiconductor structures.
Implementation Method 1
utilizing advanced processes such as multi-patterning and epitaxial growth to form nanostructure channels and transistors
Data Source
AI summary
Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a source/drain region disposed over a substrate, a first interlayer dielectric layer surrounding a first portion of the source/drain region, a second interlayer dielectric layer distinct from the first interlayer dielectric layer surrounding a second portion of the source/drain region, a silicide layer disposed on the source/drain region, and a conductive contact disposed over the source/drain region. The conductive contact is disposed in the second interlayer dielectric layer.