Dual-Sided Interconnect Cooling for Semiconductor Heat Dissipation
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, they face challenges with heat dissipation, leading to reduced device performance and increased defects due to the limitations of traditional interconnect structures.
Innovation Solution
The implementation of a dual interconnect structure approach, featuring a front-side interconnect structure coupled to a heat sink and a backside interconnect structure with embedded fluid channels in the substrate, which dissipates heat through both structures, reducing the number of layers and improving thermal efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional interconnect structures are used in semiconductor devices, then device integration density can be maintained, but heat dissipation capability deteriorates leading to reduced device performance and increased defects
Solution Approach 1:
The interconnect structure is segmented into multiple functional layers: power delivery network (PDN) layers for electrical connectivity and ground layers for thermal management. This segmentation allows independent optimization of electrical and thermal performance, enabling effective heat dissipation while maintaining device reliability
Solution Approach 2:
The ground layers are designed to serve dual functions: providing electrical grounding for signal integrity and acting as heat sinks for thermal management. This multi-functionality resolves the contradiction by enabling a single structure to simultaneously maintain electrical performance and improve heat dissipation capability
2Productivity
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but heat dissipation problems worsen
Solution Approach 1:
The patent transitions from two-dimensional planar heat dissipation to three-dimensional thermal management by implementing vertical stacking of PDN and ground layers. This dimensional change allows heat to be dissipated through multiple pathways in the vertical dimension, enabling effective thermal management in high-density integrated circuits
3Ease of manufacture
If conventional single-sided interconnect structures are used, then manufacturing process is simpler, but heat dissipation efficiency is limited
Solution Approach 1:
The manufacturing process is segmented into distinct stages: forming PDN layers on the front side, thinning the substrate, and forming ground layers on the back side. This segmentation of the manufacturing process enables the complex dual-sided structure to be produced using standard semiconductor fabrication techniques, maintaining ease of manufacture while achieving superior heat dissipation efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This dual interconnect structure enhances heat dissipation by up to 450% compared to conventional methods, improving device performance and reducing defects by allowing wider power rails and increased interconnect density.
Implementation Method 1
the front-side interconnect structure may be coupled to a heat sink and the backside interconnect structure may be coupled to a substrate. Heat may be dissipated through both the heat sink and the substrate.
Implementation Method 2
a backside interconnect structure (also referred to as a buried power network (BPN)) on opposite sides of a transistor structure
Data Source
AI summary
Semiconductor devices having improved heat dissipation and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including front-side conductive lines; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including backside conductive lines, the backside conductive lines having line widths greater than line widths of the front-side conductive lines; and a first heat dissipation substrate coupled to the backside interconnect structure.