Dual Internal Voltage Generator for Semiconductor IC Power Management

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Solution Overview

Problem

Miniaturization of semiconductor integrated circuits leads to dielectric breakdown when using conventional 5-volt external supply voltage, necessitating voltage down-conversion to maintain reliable internal voltages and reduce power consumption.

Innovation Solution

A semiconductor integrated circuit design incorporating dual internal voltage generators, one using PMOS and the other NMOS, with a power control circuit to switch between them based on driving voltages, enabling efficient generation and regulation of internal voltages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional 5-volt external supply voltage is used, then power consumption is high, but dielectric breakdown occurs reducing reliability

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit reliability
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The voltage generation function is segmented into two separate circuits: a PMOS-based voltage generator for power-on initialization and an NMOS-based voltage generator for steady-state operation. This segmentation allows each circuit to be optimized for its specific operational phase, enabling reliable voltage generation while controlling power consumption throughout the device lifecycle

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention dynamically switches between PMOS and NMOS voltage generators based on operational state. During power-on, the PMOS generator is enabled to provide stable initialization. After power-on completion, the system transitions to the NMOS generator which offers superior power efficiency. This dynamic switching resolves the contradiction by adapting the voltage generation mechanism to operational requirements

Inventive Principle:
Principle #15Dynamics

2Use of energy by moving object

If voltage down-conversion is implemented to reduce power consumption, then power consumption decreases, but circuit complexity increases

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit complexity
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The voltage down-conversion functionality is segmented into two specialized generators rather than using a single complex regulator. The PMOS-based generator handles power-on initialization with simple comparator control, while the NMOS-based generator handles steady-state operation with enhanced power efficiency. This segmentation reduces overall complexity by assigning specific functions to simpler dedicated circuits

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Each voltage generator incorporates self-regulating mechanisms through comparator feedback loops that automatically adjust output voltage to match reference levels. The PMOS generator self-regulates during power-on, and the NMOS generator self-regulates during steady-state operation, eliminating the need for external complex control circuitry and reducing overall system complexity

Inventive Principle:
Principle #25Self-service

3Reliability

If internal voltage generator is provided to ensure reliability, then circuit reliability improves, but power consumption increases

Engineering Contradiction:
Improveinternal voltage stabilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The invention implements dynamic power management by switching between PMOS and NMOS voltage generators based on operational state. During power-on, the PMOS generator ensures reliable initialization. After power-on completion, the system transitions to the NMOS generator which provides equivalent voltage stability with significantly lower power consumption due to NMOS transistors' lower leakage current and higher efficiency in steady-state operation

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the operational parameters of the voltage generation system by selecting different transistor types (PMOS vs NMOS) based on operational phase. NMOS transistors exhibit lower off-state leakage and higher efficiency during steady-state operation, allowing the system to maintain reliable voltage generation while minimizing power consumption during the extended steady-state period

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS8766709B2Semiconductor integrated circuit
Publication Date: 2014.07.01 WINBOND ELECTRONICS CORP
  • US8766709B2 patent drawing
  • US8766709B2 patent drawing
  • US8766709B2 patent drawing

AI summary

A semiconductor integrated circuit includes a first internal voltage generator including a PMOS and a first comparator, and a second internal voltage generator including an NMOS, a second comparator, and a voltage pump generator configured to provide a pumping power voltage to the second comparator. A power control circuit switchably enables an output from the first internal voltage generator during a power-on of the semiconductor integrated circuit and enables an output from the second internal voltage generator after the power-on.