Dual Ion Implanter Layout for Uniform Surface Reforming

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Solution Overview

Problem

Existing material surface reforming technologies using ion implantation are limited by the inability to uniformly reform surfaces in various patterns, concentrate ion amounts evenly, and control discoloring or yellowing, particularly when multiple ion sources are employed.

Innovation Solution

A material surface reforming apparatus utilizing a first and second ion implanter, spaced apart and point-symmetrically mounted, to create plasma and emit ion beams for forming a complex compound layer, with a controller managing the process to achieve uniform ion distribution and control surface properties like conductivity and hardness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single ion source is used for ion implantation, then the apparatus structure is simple, but the surface reformation uniformity is poor and ion amount concentration cannot be divided

Engineering Contradiction:

Improveion source configurationVSAvoidsurface reformation uniformity

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The single ion source is divided into multiple ion sources (first ion source and second ion source) that are spatially separated. Each ion source independently implants ions into the material surface, allowing the ion amount concentration to be divided and the surface reformation to be uniform across different regions.

Inventive Principle:

Principle #1Segmentation

2Manufacturing precision

If multiple ion sources are employed, then surface reformation uniformity and pattern versatility are improved, but the apparatus structure becomes complex and control difficulty increases

Engineering Contradiction:

Improvesurface reformation uniformityVSAvoidion source configuration

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Each ion source is assigned to a specific region or pattern area, allowing different ion implantation parameters (such as ion type, energy, or flux) to be applied to different regions. This enables localized surface modification with optimal properties for each region while maintaining overall uniformity.

Inventive Principle:

Principle #3Local quality

3Device complexity

If ion implantation is performed without temperature control, then the process is simple, but discoloring and yellowing occur on the material surface

Engineering Contradiction:

Improvetemperature control systemVSAvoiddiscoloring

Core Design Contradiction:

Device complexityVSObject-affected harmful factors

Solution Approach 1:

The temperature control system performs preliminary cooling or heating of the material surface before ion implantation to establish an optimal temperature range. During ion implantation, the temperature is maintained within this controlled range to prevent excessive heat accumulation that would cause discoloring or yellowing of the material surface.

Inventive Principle:

Principle #10Preliminary action

4Productivity

If vacuum state transition time is reduced for improved productivity, then material handling efficiency increases, but the quality of ion implantation process may be compromised

Engineering Contradiction:

Improvematerial handling efficiencyVSAvoidion implantation quality

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The vacuum system operates in periodic cycles: rapid vacuum establishment for material loading, maintained high vacuum for ion implantation, and controlled venting for material discharge. This periodic operation allows quick transitions during loading/unloading while ensuring the ion implantation phase occurs under stable, high-quality vacuum conditions.

Inventive Principle:

Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables uniform surface reformation in various patterns, prevents discoloring, and enhances electrical conductivity, hardness, and hydrophobicity while maintaining transparency, with improved productivity and reduced vacuum state transition times.

Implementation Method 1

a first ion implanter (120) that creates plasma composed of ionized gas particles or metal particles and emits a first ion beam toward the material (10) by applying a voltage to the created plasma

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Implementation Method 2

creates plasma composed of ionized gas particles or metal particles

Methodology Applied

Scientific EffectPlasma: Plasma

Data Source

PatentUS12431331B2Material surface reforming apparatus using ion implantation

Publication Date: 2025.09.30 RADPION INC

AI summary

A material surface reforming apparatus using ion implantation includes: a vacuum chamber unit that has an internal space in which vacuum is selectively maintained, and has a station for placing a material that is a surface reforming target in the internal space; a first ion implanter that is mounted at the upper portion of the vacuum chamber unit, creates plasma composed of ionized gas particles or metal particles, and emits a first ion beam toward the material placed on the station by applying a voltage to the created plasma; and a second ion implanter that is mounted at the upper portion of the vacuum chamber unit, creates plasma composed of ionized gas particles or metal particles, and emits a second ion beam toward the material placed on the station by applying a voltage to the created plasma.