Dual-Layer Carbon Mask for Semiconductor Recess Etching
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Solution Overview
Problem
The formation of recesses in semiconductor devices is often hindered by the poor performance of etching mask layers, leading to inadequate formation of features such as memory holes and contact holes.
Innovation Solution
A manufacturing method involving a dual-layer carbon mask layer, where a high-density diamond-like carbon film serves as the first layer and a low-density amorphous carbon film as the second layer, is used to effectively form recesses by controlling etching rates and preventing excessive enlargement or blocking of these features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single-layer carbon mask layer is used, then the manufacturing process is simple, but the etching performance is poor leading to inadequate recess formation
Solution Approach 1:
The mask layer is divided into two distinct layers: a first carbon layer with higher carbon density and a second carbon layer with lower carbon density. This segmentation allows each layer to perform different functions - the first layer provides structural stability while the second layer enables precise etching control, thereby resolving the contradiction between manufacturing simplicity and etching precision.
Solution Approach 2:
The invention uses a composite structure consisting of two carbon layers with different densities. This composite material approach combines the advantages of both high-density carbon (structural integrity) and low-density carbon (etching performance), achieving both ease of manufacture and high manufacturing precision simultaneously.
2Productivity
If the etching rate is increased to improve productivity, then more recesses can be formed faster, but the recesses may become excessively enlarged or blocked
Solution Approach 1:
The invention changes the density parameter of the carbon mask layer by creating a two-layer structure with different carbon densities. This parameter variation allows optimization of etching rate while maintaining precise control over recess dimensions, resolving the contradiction between productivity and precision.
Solution Approach 2:
Different regions of the mask layer are given different carbon densities - the first layer has higher density for structural support while the second layer has lower density for controlled etching. This local quality differentiation enables both high etching efficiency and precise dimension control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the suitable formation of memory holes and contact holes by preventing the enlargement of memory hole diameters and blocking, ensuring precise and accurate etching of semiconductor device structures.
Implementation Method 1
a high-density diamond-like carbon film serves as the first layer and a low-density amorphous carbon film as the second layer
Implementation Method 2
a low-density amorphous carbon film as the second layer
Data Source
AI summary
According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.