Dual-Layer Free Layer TMR Element Magnetostriction Control

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Solution Overview

Problem

Designing Tunneling Magnetoresistance (TMR) read elements that achieve high TMR values while maintaining controlled magnetostriction, as excessive magnetostriction can destabilize the sensor and reduce sensitivity, and existing free layers like CoFe or CoFeB offer high TMR but poor magnetic stability.

Innovation Solution

A dual-layer free layer structure in TMR elements, comprising a first ferromagnetic amorphous or polycrystalline layer optimized for TMR and a second layer optimized for magnetostriction, with the second layer exposed to oxygen to reduce magnetostriction, ensuring both high TMR and stable operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a single-layer ferromagnetic free layer (e.g., CoFe or CoFeB) is used in TMR elements, then high TMR values are achieved, but magnetostriction becomes excessive causing magnetic instability and reduced sensitivity

Engineering Contradiction:
ImproveTMR valueVSAvoidmagnetic stability
Core Design Contradiction:
Measurement precisionVSStability of the object's composition

Solution Approach 1:

The free layer is divided into two distinct ferromagnetic layers: a first layer (CoFeB or CoFe) optimized for high TMR, and a second layer (NiFe or CoFe) optimized for controlled magnetostriction. This segmentation allows each layer to independently contribute its specialized function, resolving the contradiction between achieving high TMR and maintaining magnetic stability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs a composite free layer structure combining two different ferromagnetic materials with complementary properties. The first layer provides high spin polarization for TMR, while the second layer provides controlled magnetostriction, creating a composite structure that achieves both high TMR and magnetic stability simultaneously.

Inventive Principle:
Principle #40Composite materials

2Force

If the magnetostriction of the free layer is increased to enhance magnetic moment, then the magnetic moment is strengthened, but the sensor becomes destabilized and sensitivity is reduced

Engineering Contradiction:
Improvemagnetic momentVSAvoidsensor stability
Core Design Contradiction:
ForceVSReliability

Solution Approach 1:

The magnetic moment function is segmented from the stability function into two separate layers. The first ferromagnetic layer is optimized to provide strong magnetic moment for signal detection, while the second ferromagnetic layer is optimized to provide controlled, reduced magnetostriction for stability. This functional segmentation resolves the contradiction between magnetic moment strength and sensor reliability.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dual-layer structure achieves high TMR values with reduced magnetostriction, enhancing the magnetic stability and sensitivity of the TMR elements, thereby optimizing their performance.

Implementation Method 1

TMR read elements differ from GMR elements in that a thin, electrically insulating, tunnel barrier layer (e.g., aluminum oxide or magnesium oxide) is used between the ferromagnetic pinned layer and the ferromagnetic free layer

Methodology Applied
Scientific EffectTunneling magnetoresistance (TMR): Magnetoresistance

Implementation Method 2

The composition and configuration of the ferromagnetic free layer of TMR read elements may vary depending on desired implementations... it is desirable to have both high TMR and controlled magnetostriction

Methodology Applied
Scientific EffectMagnetostriction: Magnetostriction

Implementation Method 3

the second layer exposed to oxygen to reduce magnetostriction

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS7751156B2Dual-layer free layer in a tunneling magnetoresistance (TMR) element
Publication Date: 2010.07.06 WESTERN DIGITAL TECHNOLOGIES INC
  • US7751156B2 patent drawing
  • US7751156B2 patent drawing
  • US7751156B2 patent drawing

AI summary

Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.