Dual-Layer Gate Protection for Gate-Source Short Prevention
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Solution Overview
Problem
The existing semiconductor devices face a defect rate of about 1% to 2% due to gate-source short-circuit issues, primarily caused by the characteristics of the process used in forming the insulating layer, which affects the energy conversion efficiency in eco-friendly vehicles.
Innovation Solution
The semiconductor device incorporates a dual-layer gate protection structure, comprising a first gate protection layer made of Si3N4 with a thickness of at least 500 Å and a second gate protection layer of SiO2 or Si3N4 with a thickness of 5000 to 10000 Å, surrounding the gate and gate insulating layer to prevent short circuits between the gate and source.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single insulating layer is used to isolate the gate and source, then the device structure is simple, but short circuits occur between gate and source due to process characteristics
Solution Approach 1:
The gate protection structure is divided into two distinct layers: a first gate protection layer (Si3N4) and a second gate protection layer (SiO2). Each layer serves specific functions - the first layer provides primary insulation and the second layer provides additional protection and planarization. This segmentation resolves the contradiction by improving reliability through layered protection while maintaining reasonable structural complexity.
Solution Approach 2:
The patent uses composite material structure combining Si3N4 and SiO2 layers. The Si3N4 layer provides high dielectric strength and moisture barrier properties, while the SiO2 layer provides good interface characteristics and planarization. This composite approach enhances gate-source insulation reliability without excessive complexity increase.
2Productivity
If the gate and source are physically close to improve device integration, then productivity increases, but short circuit risk increases due to process variations
Solution Approach 1:
The dual-layer gate protection structure is formed before source formation, providing pre-established insulation barriers. The first gate protection layer is formed immediately after gate patterning, and the second layer is formed subsequently, creating multiple protective barriers before the source is introduced. This preliminary action prevents short circuits even when gate and source are closely positioned for high integration.
Data Source
AI summary
A semiconductor device includes an n− type layer on a first surface of the substrate, a p type region on a part of the n− type layer, a gate on the n− type layer and the p type region, a first gate protection layer on the gate and a second gate protection layer on the first gate protection layer, a source on the second gate protection layer and the p type region, and a drain on the second surface of the substrate.