Dual-Layer Image Sensor for Simultaneous 2D and 3D Capture

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Solution Overview

Problem

Existing image sensors face challenges in capturing high-quality 2D and 3D images simultaneously due to the complexity and high processing power required for triangulation techniques, and the use of time-of-flight systems often results in poor signal quality due to shared frame times and low exposure durations.

Innovation Solution

A dual-layer image sensor design where a 2D image sensor is coupled above a 3D time-of-flight (TOF) image sensor, allowing each to receive light for a longer period, improving signal-to-noise ratios and reducing processing power, with the 2D sensor detecting visible light and the 3D sensor detecting near-infrared or infrared light using a stacked photodetector array configuration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If triangulation technique is used to capture 3D images, then 3D imaging capability is achieved, but processing power requirements increase significantly

Engineering Contradiction:
Improve3D imaging capabilityVSAvoidprocessing power
Core Design Contradiction:
Adaptability or versatilityVSPower

Solution Approach 1:

The image sensor is divided into two separate photodetector arrays: one dedicated to 2D image capture and another dedicated to 3D time-of-flight measurement. This segmentation allows each array to specialize in its function, eliminating the need for complex triangulation processing while maintaining 3D imaging capability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces an intermediary approach by using separate photodetector arrays that capture different types of light (visible vs. near-infrared) to enable both 2D and 3D imaging without requiring post-capture triangulation processing. The physical separation of detection functions reduces computational burden.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If shared frame time is used for both 2D and 3D image capture, then device complexity is reduced, but signal quality deteriorates due to low exposure durations

Engineering Contradiction:
Improvecircuit speed requirementsVSAvoidsignal quality
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The photodetector array is segmented into two independent arrays that can operate simultaneously without sharing frame time. This allows each array to have sufficient exposure duration for high-quality image capture while maintaining relatively simple circuit design.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from temporal multiplexing (sharing frame time) to spatial separation (two separate arrays). By adding the dimension of physical separation, both 2D and 3D imaging can occur simultaneously with adequate exposure times without requiring high-speed circuit switching.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Measurement precision

If stacked photodetector array configuration is used, then signal-to-noise ratio improves, but device structure becomes more complex

Engineering Contradiction:
Improvesignal-to-noise ratioVSAvoidsensor structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent employs a stacked configuration where two photodetector arrays are positioned at different depths within the sensor structure. One array detects visible light while the other detects near-infrared light, utilizing the vertical dimension to enable simultaneous 2D and 3D imaging with improved signal-to-noise ratios.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The sensor utilizes a composite structure combining multiple photodetector layers with different optical sensitivity characteristics. This composite architecture allows simultaneous detection of different light wavelengths and types, improving overall measurement precision while managing structural complexity through integrated design.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances image quality by reducing electrical and optical crosstalk, blooming, and increases the mean transfer function, enabling efficient simultaneous capture of 2D and 3D images with improved signal quality and reduced processing requirements.

Implementation Method 1

a 2D image sensor is coupled above a 3D time-of-flight (TOF) image sensor... with the 2D sensor detecting visible light

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

the 3D sensor detecting near-infrared or infrared light using a stacked photodetector array configuration

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 3

3D time-of-flight (TOF) image sensor... based on optical time of flight measurement

Methodology Applied
Scientific EffectTime of Flight: Time of Flight

Data Source

PatentUS8569700B2Image sensor for two-dimensional and three-dimensional image capture
Publication Date: 2013.10.29 OMNIVISION TECHNOLOGIES INC
  • US8569700B2 patent drawing
  • US8569700B2 patent drawing
  • US8569700B2 patent drawing

AI summary

An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.