Dual-Layer UBM Structure for Corrosion-Resistant Semiconductor Packages

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Solution Overview

Problem

The reliability of under bump metallurgy (UBM) structures in semiconductor packages is compromised due to corrosion, which affects the electrical connection efficiency and durability of the semiconductor package.

Innovation Solution

A semiconductor package design featuring a dual-layer UBM structure with a copper or copper alloy first layer and a nickel or nickel alloy second layer, where the second layer has a larger surface area exposed to the external environment, enhancing corrosion resistance and reliability by reducing the exposure of the copper layer to external factors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single-layer copper UBM structure is used, then electrical conductivity is improved, but corrosion resistance deteriorates

Engineering Contradiction:
Improvecorrosion resistanceVSAvoidUBM structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies composite materials by combining copper and nickel in a multi-layer UBM structure. The copper layer provides high electrical conductivity while the nickel layer provides corrosion resistance, creating a composite structure that achieves both electrical performance and environmental stability without excessive complexity

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The UBM structure is segmented into multiple functional layers: a copper layer for electrical conductivity and a nickel layer for corrosion protection. This segmentation allows each layer to perform its specific function optimally, with the copper layer handling electrical requirements and the nickel layer handling environmental protection

Inventive Principle:
Principle #1Segmentation

2Reliability

If the copper layer is exposed to the external environment, then electrical connection efficiency is improved, but corrosion resistance deteriorates

Engineering Contradiction:
Improveelectrical connection efficiencyVSAvoidcorrosion from external environment
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The nickel layer acts as an intermediary between the copper layer and the external environment. It provides a protective barrier that prevents direct contact between corrosive external factors and the copper layer, while still allowing the copper layer to maintain its electrical connection function through the bump structure

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The nickel layer creates an inert protective environment for the copper layer by forming a corrosion-resistant barrier. This passive protection layer shields the reactive copper from oxidation and other harmful environmental interactions, effectively creating a protected micro-environment

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

3Reliability

If a dual-layer UBM structure with nickel overlay is used, then corrosion resistance is improved, but manufacturing complexity increases

Engineering Contradiction:
ImproveUBM structure reliabilityVSAvoidUBM structure manufacturing
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The copper layer is formed first as a preliminary step, establishing the electrical connection foundation. Subsequently, the nickel layer is deposited over the copper layer in a planned sequence, allowing each layer to be optimized for its specific function while following a systematic manufacturing process that reduces overall complexity

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20240079359A1Semiconductor package
Publication Date: 2024.03.07 SAMSUNG ELECTRONICS CO LTD
  • US20240079359A1 patent drawing
  • US20240079359A1 patent drawing
  • US20240079359A1 patent drawing

AI summary

A semiconductor package including a redistribution structure comprising a redistribution layer; a semiconductor chip electrically connected to the redistribution layer; bumps disposed on the redistribution structure; and under bump metallurgy (UBM) structures disposed between the bumps and the redistribution structure. Each of the UBM structures includes a first UBM layer including copper or a copper alloy; and a second UBM layer including nickel or nickel alloy and disposed between the redistribution structure and the first UBM layer. An area of a surface of the second UBM layer facing the first UBM layer is greater than an area of a surface of the first UBM layer facing the second UBM layer.