Electro-Optical Device Dual Light Shielding for Semiconductor Films
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Solution Overview
Problem
Existing electro-optical devices, such as liquid crystal display devices, face insufficient light shielding properties due to scanning lines being used as light shielding layers, which leads to inadequate protection of semiconductor films.
Innovation Solution
The electro-optical device incorporates a dual light shielding system with a first light shielding portion and a second light shielding portion, where the potentials of these portions differ, and includes side surface light shielding portions extending from a first insulating layer to enhance light shielding, particularly around the semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a scanning line is used as a light shielding layer, then the device structure is simplified, but the light shielding property with respect to the semiconductor film is insufficient
Solution Approach 1:
The light shielding function is segmented into multiple portions: a first light shielding portion (scanning line) and a second light shielding portion (additional layer). This segmentation allows each layer to contribute to light shielding while maintaining electrical functionality, resolving the contradiction between structural simplicity and adequate light shielding performance.
Solution Approach 2:
A side surface light shielding portion is added that extends vertically from the first insulating layer to block light from lateral directions. This dimensional addition addresses light leakage paths that a planar scanning line alone cannot prevent, thereby improving light shielding property without compromising device structure simplicity.
2Device complexity
If a single light shielding layer is used, then the device structure remains simple, but light leakage occurs leading to black spots in display
Solution Approach 1:
The light shielding structure is divided into multiple functional segments: the first light shielding portion (scanning line) and the second light shielding portion (additional shielding layer). This segmentation enables comprehensive light blocking from multiple angles while maintaining reasonable structural simplicity, thereby improving display quality by preventing black spots.
Solution Approach 2:
The side surface light shielding portion extends vertically in advance to block light before it can reach the semiconductor film and cause leakage. This preliminary blocking action prevents black spots from forming in the display, improving reliability without significantly increasing device complexity.
3Object-affected harmful factors
If the first light shielding portion extends further than the second light shielding portion, then side surface light leakage is prevented, but manufacturing precision requirements increase
Solution Approach 1:
The first light shielding portion is designed with local quality variation: it extends further than the second light shielding portion specifically at the side surfaces where light leakage occurs, while maintaining standard alignment elsewhere. This localized extension targets side surface light leakage prevention without unnecessarily increasing overall manufacturing precision requirements.
Data Source
AI summary
An electro-optical device includes a substrate, a transistor including a gate electrode and a semiconductor layer disposed between the substrate and the gate electrode, a scanning line disposed in a first direction with respect to the gate electrode and electrically coupled to the gate electrode, a first light shielding portion disposed in the first direction with respect to the semiconductor layer and overlapping the semiconductor layer when viewed in the first direction, and a second light shielding portion disposed in a second direction opposite to the first direction with respect to the semiconductor layer and overlapping the semiconductor layer, the first light shielding portion includes a side surface light shielding portion that is provided on both sides of the semiconductor layer in a width direction and extends from a first insulating layer to the second light shielding portion or further, in the second direction, than the second light shielding portion.