Dual-Liquid Substrate Processing for Etching and Rear-Side Cleaning
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Solution Overview
Problem
Conventional semiconductor manufacturing methods fail to effectively etch the front surface of a substrate after thinning while removing metal contaminants from the rear surface, leading to residual stress and contamination issues.
Innovation Solution
A substrate processing apparatus and method that combines a first processing liquid for etching the front surface and a second processing liquid for removing metal contaminants from the rear surface, using a dual liquid supply system with controlled valves to ensure precise and simultaneous processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single processing liquid is used for both etching the front surface and removing metal contaminants from the rear surface, then the device complexity is reduced, but the manufacturing precision deteriorates because the etching of the front surface and cleaning of the rear surface cannot be performed simultaneously and independently
Solution Approach 1:
The processing liquid supply system is segmented into two independent subsystems: a first processing liquid supply system for etching the front surface and a second processing liquid supply system for removing metal contaminants from the rear surface. Each subsystem has its own liquid supply line and control valve, allowing independent control of processing parameters and simultaneous operation without interference
Solution Approach 2:
The holder is designed with multi-functionality to simultaneously perform two tasks: holding the substrate and enabling both front surface etching and rear surface contaminant removal through integrated liquid supply paths. The holder structure includes first and second liquid supply paths that can independently deliver processing liquids to opposite surfaces of the substrate
2Manufacturing precision
If separate processing liquid supply lines are used for etching the front surface and removing metal contaminants from the rear surface, then the manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The patent merges the etching process and contaminant removal process into a single integrated holder structure that can perform both functions simultaneously. The holder integrates multiple liquid supply paths, control valves, and processing zones into one unified device, reducing the need for separate processing chambers and minimizing overall system complexity despite the presence of multiple liquid supply lines
3Device complexity
If conventional single-liquid processing is used, then the device complexity is low, but the productivity deteriorates because multiple separate processing steps are required
Solution Approach 1:
The dual processing liquid supply system enables continuous simultaneous processing: while the first processing liquid continuously etches the front surface, the second processing liquid continuously removes metal contaminants from the rear surface. This eliminates idle time between processing steps and achieves true continuous multi-functional processing, significantly improving throughput
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables effective etching of the front surface while removing metal contaminants from the rear surface, improving substrate quality and reducing contamination, thereby enhancing the throughput and cleanliness of the processing system.
Implementation Method 1
a first processing liquid configured to etch a front surface of the first substrate is supplied to the front surface of the first substrate
Implementation Method 2
a second processing liquid configured to remove a metal contaminant on the rear surface of the second substrate is supplied to the rear surface of the second substrate
Implementation Method 3
a rinse liquid is supplied to the rear surface of the second substrate
Data Source
AI summary
A substrate processing apparatus configured to process a combined substrate in which a first substrate having thereon a device layer and a second substrate are bonded to each other includes a holder configured to hold a rear surface of the second substrate; a processing unit configured to process the first substrate held by the holder; a first processing liquid supply configured to etch a front surface of the first substrate by supplying a first processing liquid to the front surface of the first substrate opposite to a surface thereof where the device layer is provided; and a second processing liquid supply configured to remove a metal contaminant on the rear surface of the second substrate by supplying a second processing liquid to the rear surface of the second substrate.