Dual Load Lock Chamber for Halogen Residue Removal
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Solution Overview
Problem
Current methods for removing halogen-containing residues from semiconductor substrates after plasma etching are inefficient, leading to particle contamination and corrosion in processing systems, requiring additional steps and increasing manufacturing costs.
Innovation Solution
A dual load lock chamber system with two isolated chamber volumes, where the second chamber is equipped with a heated substrate support and a remote plasma source to generate reactive species, allowing for the removal of halogen-containing residues through thermal treatment and plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a remote plasma reactor is used to remove halogen-containing residues, then the residues are converted to non-corrosive volatile compounds, but a dedicated process chamber is required which increases tool expense and reduces manufacturing productivity
Solution Approach 1:
The patent combines the residue removal function with the existing load lock chamber, eliminating the need for a separate remote plasma reactor. The load lock chamber is configured to perform both substrate transfer and halogen residue removal functions, thereby merging multiple processes into a single chamber and improving manufacturing throughput without sacrificing residue removal effectiveness.
2Ease of manufacture
If halogen-containing residues are not removed, then manufacturing cost is reduced, but particle contamination and corrosion occur in processing systems
Solution Approach 1:
The patent converts the harmful halogen-containing residues into non-corrosive volatile compounds through plasma treatment within the load lock chamber. The harmful residues are transformed into beneficial non-corrosive substances that can be safely pumped away, thereby eliminating contamination and corrosion issues while maintaining cost-effectiveness.
3Object-affected harmful factors
If additional processing steps are added to remove residues, then contamination is reduced, but process time and manufacturing cost increase
Solution Approach 1:
The patent merges the residue removal step with the substrate transfer process by configuring the load lock chamber to perform both functions. This integration eliminates the need for separate processing steps, reducing total process cycle time while maintaining effective contamination control through plasma treatment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes halogen residues without the need for additional processing steps, reducing contamination and manufacturing costs by creating a symmetrical processing environment and utilizing reactive species to convert residues into non-corrosive compounds.
Implementation Method 1
a heated substrate support assembly disposed in the second chamber volume and configured to support and heat a substrate
Implementation Method 2
a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume
Data Source
AI summary
Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.


