Dual Load Lock Ion Implantation Pre-Heating
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Solution Overview
Problem
In semiconductor processing, the throughput of ion implantation systems is limited by the time-consuming heating process using electrostatic chucks in vacuum environments, which causes thermal expansion issues and reduces workpiece availability for subsequent processing steps, leading to decreased productivity and increased costs.
Innovation Solution
A dual load lock assembly system with pre-heat and post-cool apparatuses, where workpieces are pre-heated to a first temperature in an atmospheric environment and then transferred to a thermal chuck for high-temperature ion implantation, followed by cooling in a separate chamber, optimizing thermal management and minimizing thermal stress on the workpiece.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heating is performed via electrostatic chuck in vacuum environment, then workpiece reaches process temperature for ion implantation, but heating time is excessive and causes thermal expansion issues
Solution Approach 1:
The workpiece is pre-heated in the atmospheric load lock chamber before being transferred to the vacuum environment. This preliminary heating action reduces the heating time required in the vacuum chamber, thereby increasing throughput while preventing thermal expansion issues during the implantation process.
2Temperature
If heating is performed via electrostatic chuck in vacuum environment, then workpiece reaches process temperature, but thermal expansion causes workpiece movement and wear
Solution Approach 1:
The workpiece is pre-heated in the atmospheric load lock chamber before being transferred to the vacuum environment. This preliminary heating action reduces the heating time required in the vacuum chamber, thereby increasing throughput while preventing thermal expansion issues during the implantation process.
3Manufacturing precision
If sequential operations are performed for workpiece transfer and positioning, then workpiece is properly prepared for implantation, but tool productivity is severely limited
Solution Approach 1:
The system divides the load lock into two separate chambers: an atmospheric load lock chamber for pre-heating and positioning operations, and a vacuum load lock chamber for transfer and implantation. This segmentation allows parallel execution of heating/positioning in one chamber while vacuum operations occur in the other, thereby eliminating sequential delays and improving throughput.
Solution Approach 2:
The atmospheric load lock chamber serves as an intermediary environment where workpieces can be pre-heated and positioned without compromising the vacuum environment. This intermediary chamber allows preparatory operations to occur independently, enabling faster cycle times while maintaining the integrity of the vacuum processing environment.
4Productivity
If pre-heating is performed in atmospheric environment, then heating time is reduced and throughput is maximized, but additional chambers and complexity are required
Solution Approach 1:
The system divides the load lock into two separate chambers: an atmospheric load lock chamber for pre-heating and positioning operations, and a vacuum load lock chamber for transfer and implantation. This segmentation allows parallel execution of heating/positioning in one chamber while vacuum operations occur in the other, thereby eliminating sequential delays and improving throughput.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maximizes throughput by reducing cycle time, minimizing heat losses, and preventing thermal expansion-related issues, while maintaining high-temperature processing capabilities, thus enhancing overall system productivity and reducing costs.
Implementation Method 1
a pre-heat apparatus in the first chamber, wherein the pre-heat apparatus is configured to heat a workpiece to a first temperature
Implementation Method 2
a thermal chuck in the process chamber, wherein the thermal chuck is configured to heat the workpiece to a process temperature
Implementation Method 3
a post-cool apparatus in the second chamber, wherein the post-cool apparatus is configured to cool the workpiece to a second temperature
Implementation Method 4
an ion implantation apparatus configured to direct an ion beam toward a process chamber
Implementation Method 5
Processing of a workpiece, such as ion implantation, for example, is typically performed at a reduced pressure within an implantation chamber
Data Source
AI summary
An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.