Dual Loop Susceptor Temperature Control for PECVD
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Solution Overview
Problem
The temperature of the substrate and substrate support assembly in plasma enhanced chemical vapor deposition (PECVD) processes experiences undesirable spikes, leading to process variations and overheating, necessitating an improved temperature control system.
Innovation Solution
A temperature control system comprising a remote fluid source with two reservoirs maintaining fluids at different temperatures, a main frame with two fluid loops, and a proportioning valve to mix these fluids and regulate the temperature of the substrate support assembly, ensuring precise temperature control through a PID controller.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma is energized to deposit thin film on substrate, then film deposition is achieved, but substrate and support assembly temperature increases excessively (30-50°C spike)
Solution Approach 1:
The temperature control system is divided into two separate fluid loops: a first fluid loop for heating and a second fluid loop for cooling. This segmentation allows independent control of heating and cooling functions, enabling precise temperature regulation during plasma deposition without excessive temperature spikes.
Solution Approach 2:
The system dynamically adjusts the flow rates and temperatures of fluids in both loops to change thermal parameters in real-time. By modifying fluid flow parameters and mixing ratios, the system compensates for plasma-induced temperature increases while maintaining optimal substrate temperature for film deposition.
2Device complexity
If temperature control system uses single fluid loop, then system complexity is reduced, but temperature regulation precision during plasma processing is insufficient
Solution Approach 1:
The temperature control system is divided into two separate fluid loops: a first fluid loop for heating and a second fluid loop for cooling. This segmentation allows independent control of heating and cooling functions, enabling precise temperature regulation during plasma deposition without excessive temperature spikes.
Solution Approach 2:
The system incorporates temperature sensors and controllers that continuously monitor substrate and support assembly temperature, then adjust fluid flow rates and mixing ratios in real-time. This feedback mechanism ensures precise temperature control by compensating for plasma-induced temperature variations dynamically.
3Measurement precision
If proportioning valve mixes cold and hot fluids, then temperature control precision is improved, but device complexity increases
Solution Approach 1:
The proportioning valve serves multiple functions: it mixes hot and cold fluids in variable ratios, controls overall fluid flow distribution, and enables dynamic temperature adjustment. This multi-functionality achieves precise temperature control while minimizing the number of separate components needed in the system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively maintains the substrate support assembly at a desired temperature, reducing process variations and overheating by circulating and mixing fluids to achieve a stable temperature, thus enhancing the consistency and efficiency of PECVD processes.
Implementation Method 1
A first fluid having a first temperature is circulated in a first fluid loop
Implementation Method 2
A second fluid having a second temperature is circulated in a second fluid loop
Implementation Method 3
A proportioning valve mixes the first fluid and the second fluid. The proportioning valve is configured to create a third fluid having a third temperature
Implementation Method 4
Plasma enhanced chemical vapor deposition (PECVD) may be employed in flat panel display fabrication to deposit thin film on a substrate supported within a vacuum processing chamber on a substrate support assembly. PECVD is generally accomplished by energizing a precursor gas into a plasma within the vacuum processing chamber, and depositing a film on the substrate from the energized precursor gas.
Data Source
AI summary
Embodiments described herein generally relate to a temperature control system for a substrate support assembly disposed in a substrate processing system. In one embodiment, a temperature control system is disclosed herein. The temperature control system includes a remote fluid source and a main frame system. The remote fluid source includes a first reservoir and a second reservoir. The main frame system includes a first fluid loop and a second fluid loop. The first fluid loop is coupled to, and configured to receive a first fluid from, the first reservoir. The second fluid loop is coupled to and configured to receive a second fluid from the second reservoir. The first proportioning valve has a first inlet in communication with the first fluid loop and a second inlet in communication with the second fluid loop. The first proportioning valve has an outlet configured to flow a third fluid.