Dual Magnetic Shielding for MRAM Die Protection

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Solution Overview

Problem

Magnetic random access memory (MRAM) devices are susceptible to errors due to stray or externally applied electromagnetic fields, as existing shielding methods like epoxy or plastic encapsulation do not provide effective protection against magnetic interference.

Innovation Solution

A semiconductor package design incorporating two magnetic shields, one embedded within the substrate and another on top of the MRAM die, using Ni/Fe material for enhanced magnetic shielding, ensuring protection from both sides.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a single magnetic shield is attached to one side of the MRAM die, then protection from external magnetic fields is provided on that side, but the other side remains susceptible to stray magnetic waves

Engineering Contradiction:
Improvemagnetic field protectionVSAvoidmagnetic resistance
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The magnetic shielding function is segmented into two separate shields: a first magnetic shield attached to the first major surface of the substrate and a second magnetic shield attached to the second major surface of the substrate. This segmentation ensures that both sides of the MRAM die are independently protected from magnetic interference, resolving the issue where a single shield leaves one side vulnerable.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The solution transitions from one-dimensional shielding (single shield on one side) to two-dimensional shielding by placing magnetic shields on both major surfaces of the substrate. This dimensional expansion of the shielding approach provides comprehensive protection against magnetic fields approaching from any direction.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dual magnetic shielding structure effectively enhances magnetic resistance, capable of resisting up to 100 Gs of external magnetic fields, thereby reducing errors in MRAM devices.

Implementation Method 1

A magnetic shield 20 is attached to a top surface of the MRAM die 12. The magnetic shield 20 may include a traditional Ni/Fe shield for protecting the MRAM die 12 from external magnetic fields.

Methodology Applied
Scientific EffectMagnetic shielding: Magnetism

Data Source

PatentUS8466539B2MRAM device and method of assembling same
Publication Date: 2013.06.18 VLSI TECHNOLOGY LLC
  • US8466539B2 patent drawing
  • US8466539B2 patent drawing
  • US8466539B2 patent drawing

AI summary

A method of assembling a magnetoresistive random access memory (MRAM) device includes providing a substrate having an opening. A tape is applied to a surface of the substrate and a first magnetic shield is placed onto the tape and within the substrate opening. An adhesive is applied between the first magnetic shield and the substrate to attach the first magnetic shield to the substrate. An MRAM die is attached to the first magnetic shield and bond pads of the MRAM die are connected to pads on the substrate with wires. A second magnetic shield is attached to a top surface of the MRAM die. An encapsulating material is dispensed onto the substrate, the MRAM die, the second magnetic shield and part of the first magnetic shield, cured, and then the tape is removed. Solder balls then may be attached to the substrate.