Dual Mask Pattern Layout for Mixed Critical Dimensions
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Solution Overview
Problem
Existing semiconductor manufacturing methods struggle to simultaneously form both large and small critical dimensions on a device using a single mask pattern, leading to poor pattern density and uniformity, which affects device performance.
Innovation Solution
A dual mask pattern system is introduced, where the first mask pattern performs a single exposure and etching process for large critical dimensions, while the second mask pattern performs a self-aligned multiple patterning process for small critical dimensions, with overlapping target patterns to optimize space utilization and maintain desired pattern density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single mask pattern is used for both large and small critical dimensions, then the device structure is simple, but the pattern density is insufficient for small critical dimensions
Solution Approach 1:
The mask pattern is segmented into two distinct patterns: a first mask pattern with larger pitch for large critical dimensions, and a second mask pattern with smaller pitch for small critical dimensions. This segmentation allows each pattern to be optimized independently for its specific dimension requirement, resolving the contradiction between structural simplicity and pattern density precision.
2Productivity
If a single exposure and etching process is used, then the manufacturing process is simple, but it cannot meet the requirements for small critical dimensions
Solution Approach 1:
The manufacturing process is segmented into two separate exposure and etching processes: a first process using the first mask pattern for large critical dimensions, and a second process using the second mask pattern for small critical dimensions. This process segmentation enables each step to be tuned for its specific dimension range while maintaining overall manufacturing efficiency.
Solution Approach 2:
The solution introduces a temporal dimension by performing the first and second mask patterns in sequence through multiple exposure and etching processes. This dimensional approach allows the system to handle both large and small critical dimensions that cannot be accommodated simultaneously in a single process step.
3Manufacturing precision
If the mask pattern density is optimized for small critical dimensions, then small devices are formed accurately, but large critical dimensions cannot be formed simultaneously
Solution Approach 1:
The mask pattern system is divided into two specialized patterns: the first mask pattern optimized for large critical dimensions with appropriate pitch, and the second mask pattern optimized for small critical dimensions with smaller pitch. This segmentation allows each pattern to achieve optimal precision for its target dimension range.
Solution Approach 2:
The dual mask pattern system achieves multi-functionality by enabling the formation of both large and small critical dimensions through coordinated use of the two patterns. The first and second mask patterns work together in a unified manufacturing system to produce devices with mixed critical dimension requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dual mask pattern system ensures uniformity and stability in forming devices with both large and small critical dimensions, enhancing device performance by maintaining desired pattern density and reducing defects.
Implementation Method 1
In the exposure step, light is irradiated onto the silicon wafer coated with photoresist through a light-transmitting region in the mask, and the photoresist undergoes chemical reactions under the irradiation of the light.
Implementation Method 2
In the development step, because the irradiated and non-irradiated photoresist has different dissolution degree in the developer, a photolithography pattern is formed to transfer the mask pattern to the photoresist layer.
Implementation Method 3
In the etching step, based on the photolithography pattern formed in the photoresist layer, the silicon wafer is etched to further transfer the mask pattern to the silicon wafer.
Data Source
AI summary
A mask pattern for forming the semiconductor structure is provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.