Semiconductor device including penetration via structure
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Solution Overview
Problem
The challenge in semiconductor devices is to maintain reliability and efficiency while scaling down MOSFETs, which leads to deterioration in operational properties due to increased demand for smaller pattern sizes and reduced design rules.
Innovation Solution
A semiconductor device is designed with a semiconductor substrate having a penetration via structure that electrically connects the power rail and the power delivery network, utilizing different conductive materials for the first and second conductive patterns to enhance deposition processes and reduce resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If MOSFETs are scaled down to meet increasing demand for smaller pattern sizes, then device size is reduced, but operational properties deteriorate
Solution Approach 1:
The penetration via structure is divided into multiple conductive patterns (first conductive pattern and second conductive pattern) with different materials. This segmentation allows each layer to be optimized for specific functions: the lower conductive pattern provides mechanical strength and diffusion barrier, while the upper conductive pattern ensures low resistance electrical connection, thereby maintaining reliability in scaled-down devices
Solution Approach 2:
The penetration via structure employs composite materials by combining different conductive materials in the first and second conductive patterns. This composite structure leverages the advantages of each material: one material provides excellent diffusion barrier properties while the other provides low electrical resistance, resolving the contradiction between device miniaturization and operational reliability
2Ease of manufacture
If single material is used in penetration via structure, then fabrication process is simplified, but resistance increases and diffusion control deteriorates
Solution Approach 1:
Different materials are used in different regions of the penetration via structure based on local requirements. The first conductive pattern uses a material optimized for diffusion barrier properties where it interfaces with the semiconductor substrate, while the second conductive pattern uses a material optimized for low electrical resistance where it connects to power rails. This local optimization resolves the contradiction between fabrication simplicity and performance
Solution Approach 2:
The invention changes the material parameter of the conductive patterns by using different materials for the first and second conductive patterns. This parameter change allows simultaneous optimization of diffusion barrier properties and electrical resistance, achieving both low resistance and effective diffusion control without compromising fabrication feasibility
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first surface and a second surface, which are opposite to each other, an active pattern protruding from the first surface of the semiconductor substrate, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, a power delivery network disposed on the second surface of the semiconductor substrate, and a penetration via structure penetrating the semiconductor substrate and electrically connected to the power rail and the power delivery network. The penetration via structure includes a first conductive pattern electrically connected to the power rail and a second conductive pattern electrically connected to the power delivery network. The first conductive pattern includes a material different from the second conductive pattern.