Dual Mode Gas Field Ion Source for Focused Ion Beam
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Solution Overview
Problem
Dual beam systems for semiconductor manufacturing are complex and expensive due to the need for separate electron and ion beam columns for observation and material modification, which increases costs and complexity.
Innovation Solution
A focused ion beam device with a gas field ion source that can switch between light and heavy gases for dual mode operation, using different gases for imaging and material modification, and employing a single column setup to reduce costs and complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If separate electron beam column and ion beam column are used for observation and material modification, then imaging quality and material modification capability are improved, but device complexity and cost increase
Solution Approach 1:
The patent combines the electron beam column and ion beam column into a single integrated device. The device includes both an electron beam source and an ion beam source within one column structure, allowing observation and material modification functions to be performed in a unified system rather than requiring separate independent columns.
Solution Approach 2:
The device is designed with multi-functionality, enabling it to perform both imaging (observation) and material modification tasks using a single integrated system. The device can switch between electron beam mode for high-resolution imaging and ion beam mode for material modification, eliminating the need for separate specialized columns.
2Measurement precision
If separate electron beam column and ion beam column are used for observation and material modification, then imaging quality and material modification capability are improved, but cost increases
Solution Approach 1:
The patent combines the electron beam column and ion beam column into a single integrated device. The device includes both an electron beam source and an ion beam source within one column structure, allowing observation and material modification functions to be performed in a unified system rather than requiring separate independent columns.
3Adaptability or versatility
If different gases are used for imaging and material modification, then functionality is improved, but gas switching complexity increases
Solution Approach 1:
The device is designed with multi-functionality, enabling it to perform both imaging (observation) and material modification tasks using a single integrated system. The device can switch between electron beam mode for high-resolution imaging and ion beam mode for material modification, eliminating the need for separate specialized columns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-resolution imaging and sample modification with reduced costs by using a single column setup, allowing for efficient switching between imaging and material modification modes using different gases, thereby simplifying operations and reducing equipment complexity.
Implementation Method 1
an emitter with an emitter area for generating ions of a light gas and a heavy gas
Implementation Method 2
an electrode for extracting ions from the gas field ion source emitter
Implementation Method 3
an objective lens for focusing the ion beam generated from the first gas or the second gas
Data Source
AI summary
A focused ion beam device is described. The focused ion beam device includes an ion beam column including an enclosure for housing a gas field ion source emitter with an emitter area for generating ions, an electrode for extracting ions from the gas field ion source emitter, one or more gas inlets adapted to introduce a first gas and a second gas to the emitter area, an objective lens for focusing the ion beam generated from the first gas or the second gas, a voltage supply for providing a voltage between the electrode and the gas field ion source emitter, and a controller for switching between a first voltage and a second voltage of the voltage supply for generating an ion beam of ions of the first gas or an ion beam of ions of the second gas.