Dual Mode Ion Implanter Beam Width Control
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Solution Overview
Problem
Current ion implantation systems require separate dedicated equipment for ribbon beam and spot beam modes, limiting flexibility and efficiency in substrate processing, as ribbon beam implanters are optimized for high dose rate but lack dose uniformity control, while spot beam implanters provide better control but lower dose rates.
Innovation Solution
A dual mode ion implanter system with a movable beam blocker and scanner that can adjust the ion beam width and scanning state, allowing reversible switching between ribbon beam and spot beam modes, enabling flexible operation without the need for multiple machines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a ribbon beam ion implanter is used, then high dose rate implantation is achieved, but dose uniformity control deteriorates
Solution Approach 1:
The system dynamically switches between ribbon beam mode (for high dose rate) and spot beam mode (for dose uniformity control) using a mode selector that adjusts beam width and scanner operation. The beam width is made variable through a movable beam blocker, and the scanner can operate in different states (scanning vs. non-scanning) to achieve the desired beam configuration for each mode.
2Manufacturing precision
If a spot beam ion implanter is used, then dose uniformity control is improved, but dose rate deteriorates
Solution Approach 1:
The ion implanter is designed to perform multiple functions by incorporating both ribbon beam and spot beam capabilities in a single system. The mode selector enables the system to switch between high dose rate ribbon beam operation and precise dose control spot beam operation, making the equipment universal for different implantation requirements.
3Reliability
If separate dedicated equipment is used for ribbon beam and spot beam modes, then each mode is optimized, but device complexity and the need for multiple machines increases
Solution Approach 1:
The patent merges the functionality of separate ribbon beam and spot beam implanters into a single dual-mode system. By combining the ion source, beam width adjustment mechanism (movable beam blocker), scanner, and mode selector into one integrated system, the patent eliminates the need for multiple dedicated machines while maintaining optimization for both modes.
4Manufacturing precision
If beam width is reduced for spot beam mode, then dose uniformity control is improved, but beam current deteriorates
Solution Approach 1:
The beam width is made dynamically adjustable through a movable beam blocker that can position itself to define different aperture widths. This allows the system to switch between wide beam configuration (ribbon beam with high current) and narrow beam configuration (spot beam with better dose control) while maintaining optimal beam current for each mode.
Data Source
AI summary
A system for dual mode operation in an ion implanter may include a movable beam blocker to adjust beam width of an ion beam in a first direction perpendicular to a first local direction of propagation of the ion beam. The system may further include a scanner to scan the ion beam in a second direction perpendicular to a second local direction of propagation of the ion beam when in a first state and to transmit the ion beam unperturbed in a second state; and mode selector to send a set of signals to the movable beam blocker and to the scanner in order to adjust the width of the ion beam and state of the scanner in concert.