Non-volatile Memory Device with Dual NAND Arrays for Continuous SPI Read
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Solution Overview
Problem
NAND flash memory devices face challenges in continuous data reading, especially when the start address is near the end of a page, leading to difficulties in sequential page reading and high-speed data output.
Innovation Solution
The implementation of a non-volatile memory device with multiple NAND cell arrays and X-decoders connected to page buffers, allowing simultaneous sensing and latching of data across arrays, enabling continuous data output through a serial peripheral interface (SPI) with no latency between pages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a single NAND cell array is used for data storage, then device complexity is reduced, but data capacity and continuous reading performance deteriorate
Solution Approach 1:
The memory device is divided into multiple NAND cell arrays (first NAND cell array and second NAND cell array), each capable of storing data independently. This segmentation allows the system to read data from different arrays simultaneously, thereby increasing data capacity and improving continuous reading performance without excessive complexity increase.
2Speed
If data reading is performed sequentially page by page, then device complexity is reduced, but reading speed and continuity deteriorate
Solution Approach 1:
The control logic is designed to read data from the second NAND cell array while the first NAND cell array is still outputting data. This preliminary action of reading the next page in advance enables continuous data output without waiting for sequential page completions, significantly improving reading speed.
Solution Approach 2:
The system maintains continuous data output by overlapping the reading and output operations across multiple pages. While the first page data is being output, the second page data is already being read and prepared, ensuring no interruption in the data stream and achieving high-speed continuous reading.
3Adaptability or versatility
If start address is located near the last part of a page, then data storage flexibility is improved, but continuous reading capability deteriorates
Solution Approach 1:
By segmenting data across multiple NAND cell arrays, the system can handle start addresses located anywhere within a page. When the start address is near the end of a page, the control logic can seamlessly transition to reading from the second array, maintaining continuous reading capability regardless of the starting position.
Data Source
AI summary
Provided are a non-volatile memory device, an electronic control system, and a method of operating the non-volatile memory device. A non-volatile memory device according to an embodiment of the present invention includes a first NAND cell array including a first group of pages, and a second NAND cell array including a second group of pages. A plurality of X-decoders are at least one-to-one connected to the first and second NAND cell arrays. A control logic controls the plurality of X-decoders to simultaneously sense data of a first page corresponding to a start address from among the first group of pages, and data of a second page subsequent to the first page from among the second group of pages.