Dual Nozzle Substrate Rinse for Uniform Film Thickness
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Solution Overview
Problem
During the cleaning process of semiconductor or display device manufacturing, contaminants and particles are easily adsorbed on the substrate's edge areas where the rinse solution thickness is reduced due to strong rotation forces, leading to ineffective cleaning.
Innovation Solution
A substrate processing apparatus with a support unit and dual nozzles that discharge rinse solutions to specific areas of the substrate, ensuring the entire surface is wetted by alternating the discharge timing and areas of the first and second rinse solutions to maintain consistent liquid film thickness and prevent particle adsorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is rotated during the cleaning process, then the cleaning process can be performed, but the rotation force reduces the thickness of the rinse solution in edge areas, causing contaminants and particles to be easily adsorbed
Solution Approach 1:
The cleaning process is divided into multiple periods with different rotation speeds and rinse solution discharge patterns. During the first period, the substrate rotates at a first rotation speed with rinse solution discharged to a first area, and during the second period, it rotates at a second rotation speed with rinse solution discharged to a second area, ensuring comprehensive coverage while maintaining solution thickness
Solution Approach 2:
Rinse solution is discharged to specific areas before the substrate rotates away from those areas. The timing of rinse solution discharge is controlled so that the solution is applied to each area while the substrate is in the appropriate position, preventing particle adsorption before it can occur
2Speed
If the substrate rotation speed is increased, then the cleaning process is faster, but the rinse solution thickness is reduced in areas far from the center
Solution Approach 1:
The substrate rotation speed is dynamically adjusted between a first rotation speed and a second rotation speed during different periods of the cleaning process. This dynamic speed adjustment allows the system to maintain adequate rinse solution thickness while still achieving effective cleaning through varied rotational patterns
3Area of stationary object
If the entire substrate surface is wetted with rinse solution simultaneously, then cleaning coverage is improved, but particle adsorption still occurs in areas where rotation force is strong
Solution Approach 1:
The cleaning process uses periodic action by dividing it into multiple periods where different areas of the substrate are targeted with rinse solution at different times. The first period targets a first area while the second period targets a second area, ensuring that no area is exposed to strong rotation forces without adequate rinse solution coverage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses particle adsorption on the substrate surface by maintaining a consistent rinse solution thickness across the substrate, reducing cleaning time and preventing defects, while ensuring the entire surface is adequately wetted.
Implementation Method 1
In an area far from the center of the substrate (e.g., an edge area), the rotation force is strong, and the thickness of the rinse solution may be reduced
Data Source
AI summary
A substrate processing apparatus includes a support unit; a first nozzle for discharging a first rinse solution to a first area of the substrate; and a second nozzle for discharging a second rinse solution to a second area of the substrate, wherein the first nozzle discharges the first rinse solution to a first area during a first period so that the first area and the second area of the substrate are wetted by the first rinse solution, and some area of the substrate is not wetted by the first rinse solution, wherein the first nozzle discharges the first rinse solution to the first area and the second nozzle discharges the second rinse solution to the second area in a second period directly connected to the first period so that an entire upper surface of the substrate is wetted by the first rinse solution and the second rinse solution.