Dual-Path Power Amplifier Biasing for Efficiency and Linearity

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Solution Overview

Problem

Conventional power amplifiers face challenges in miniaturization due to large transistor and peripheral circuit sizes on printed circuit boards, and they have limitations in efficiency and gain linearity.

Innovation Solution

A power amplifier design with two amplification paths, each comprising transistors with different DC bias voltages, where the first DC bias voltage is higher than the second, and a power divider allocates input signals to both paths, improving efficiency and linearity by adjusting conduction angles and using silicon and gallium nitride transistors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If conventional power amplifiers use transistors and peripheral circuits fabricated on printed circuit boards, then the amplifier can achieve basic amplification function, but the transistors and peripheral circuits occupy large area on the printed circuit board which is not conducive to miniaturization

Engineering Contradiction:
Improvesize of power amplifierVSAvoidlayout complexity on printed circuit board
Core Design Contradiction:
Volume of moving objectVSDevice complexity

Solution Approach 1:

The patent merges multiple transistors and peripheral circuits into an integrated circuit structure, combining the amplification paths, bias voltage generation circuits, and control circuits into a single integrated unit. This integration eliminates the need for separate printed circuit board layouts, significantly reducing the overall device area while maintaining all necessary functions.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The integrated circuit design implements multi-functionality by incorporating multiple amplification paths with different bias voltages within a single device structure. The circuit can simultaneously handle different signal power levels through different paths, providing both high-power and low-power amplification capabilities in one unified structure, thus reducing the need for separate components.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If conventional power amplifiers use single amplification path, then the structure is simple, but the efficiency and gain linearity have limitations and possibilities to improve

Engineering Contradiction:
Improveefficiency and gain linearityVSAvoidamplification path structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the amplification function into multiple parallel paths, where each path is optimized for different operating conditions. The first amplification path uses a first transistor with first DC bias voltage for high-power signals, while the second amplification path uses a second transistor with second DC bias voltage for low-power signals. This segmentation allows each path to operate in its optimal efficiency range, improving overall reliability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic switching between different amplification paths based on the input signal power level. A control circuit dynamically selects which amplification path to use or combines both paths, allowing the system to adapt to varying signal conditions in real-time. This dynamic operation optimizes efficiency and gain linearity across different power levels.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20250096730A1Power amplifier and method for controlling power amplifier
Publication Date: 2025.03.20 SUZHOU WATECH ELECTRONICS CO LTD
  • US20250096730A1 patent drawing
  • US20250096730A1 patent drawing
  • US20250096730A1 patent drawing

AI summary

Disclosed are a power amplifier and a method for controlling a power amplifier. The method includes providing an input signal to the first amplification path and the second amplification path; and supplying a first DC bias voltage and a second DC bias voltage to a control port of the third transistor and a control port of the fourth transistor respectively, where current conduction trenches of the third transistor and the fourth transistor comprise same materials and the first DC bias voltage is higher than the second DC bias voltage.