Dual-Path Level Shifter for MOSFET Voltage Stress Protection

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional level shifter circuits face challenges in efficiently shifting input signal levels without causing voltage stress on MOSFET devices, leading to potential device degradation and reduced reliability.

Innovation Solution

A dual path level shifter circuit utilizing a combination of voltage-to-current and current-to-voltage converters, along with MOSFET devices configured to prevent voltage levels at junctions from exceeding a stress threshold, allows for signal level shifting while minimizing voltage stress on devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional level shifter circuits are used to shift input signal levels, then signal level shifting is achieved, but voltage stress on MOSFET devices occurs leading to potential device degradation

Engineering Contradiction:
Improvedevice reliabilityVSAvoidvoltage stress on MOSFET devices
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The level shifter circuit is divided into two separate paths: a first path for signals at a first voltage level and a second path for signals at a second voltage level. Each path contains MOSFET devices optimized for its specific voltage range, preventing devices from experiencing voltage stress beyond their rated capabilities. The circuit selectively activates the appropriate path based on the input signal level.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The circuit changes operational parameters by switching between different signal paths depending on the input voltage level. When the input signal exceeds a threshold level, the circuit transitions from using the first path to using the second path, thereby adapting the operating conditions to match the signal characteristics and prevent voltage stress on devices.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If MOSFET devices are configured to prevent voltage levels at junctions from exceeding stress threshold, then device protection is improved, but circuit complexity increases due to dual path configuration

Engineering Contradiction:
Improvedevice protectionVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Both the first and second signal paths are designed with similar functional structures containing voltage-to-current converters and current-to-voltage converters, but optimized for different voltage levels. This multi-functional design allows the circuit to handle different signal levels using analogous circuit topologies, making the complexity manageable through repetition of proven design patterns.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The circuit introduces intermediate control mechanisms including a first control signal and a second control signal that regulate which path is active. These intermediary control signals act as mediators between the input signal and the appropriate signal path, enabling smooth transitions and preventing voltage stress without requiring complex switching logic.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS8803585B2Dual path level shifter
Publication Date: 2014.08.12 PSEMI CORP
  • US8803585B2 patent drawing
  • US8803585B2 patent drawing
  • US8803585B2 patent drawing

AI summary

Dual path level shifter methods and devices are described. The described level shifter devices can comprise voltage-to-current and current-to-voltage converters.