Dual-Phase Memory Temperature Sensing With Single-Point Calibration

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Solution Overview

Problem

Existing temperature sensors in memory devices suffer from inaccuracies and variations in their output readings, which affect temperature measurement accuracy and device performance.

Innovation Solution

Implementing dual phase temperature sensors calibrated at a single temperature, utilizing a reference phase and a sampling phase to generate ramp voltages, with a reference phase count and a sampling phase count to minimize errors, allowing for precise temperature measurement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If traditional temperature sensors are used in memory devices, then device complexity is reduced, but measurement precision deteriorates due to inaccuracies and variations in output readings

Engineering Contradiction:
Improvetemperature measurement accuracyVSAvoidtemperature sensor structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The temperature sensor is divided into two independent phases: a reference phase that generates a reference voltage value and a sampling phase that generates a temperature-dependent voltage value. Each phase operates independently with its own counter, allowing the system to measure temperature by comparing the two phases rather than relying on a single complex sensing mechanism.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The reference phase performs preliminary action by generating a reference voltage value before the sampling phase measures the temperature-dependent voltage value. This preliminary reference establishment allows for accurate temperature measurement without requiring complex real-time calibration during the actual temperature sensing operation.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If multiple temperature sensors are implemented per device, then measurement precision improves, but device complexity increases

Engineering Contradiction:
Improvetemperature measurement accuracyVSAvoidnumber of temperature sensors
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The dual phase temperature sensor structure allows a single sensor to perform multiple functions: the reference phase establishes a baseline reference voltage, while the sampling phase performs actual temperature measurement. This multi-functionality enables accurate temperature sensing without requiring multiple separate sensors, thereby improving measurement precision while avoiding the complexity increase that would result from adding multiple sensors.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Measurement precision

If calibration is performed at multiple temperatures, then measurement precision improves, but loss of time increases due to extended calibration procedures

Engineering Contradiction:
Improvetemperature measurement accuracyVSAvoidcalibration time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The system changes the calibration approach from temporal calibration (calibrating at multiple different temperatures) to spatial calibration (calibrating at a single reference temperature and using the reference phase to establish a baseline). By using the reference phase to generate a reference voltage value at a known reference temperature, the system achieves accurate temperature measurement without requiring time-consuming multi-point calibration procedures.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20260023497A1Memory devices with dual phase temperature sensors
Publication Date: 2026.01.22 MICRON TECHNOLOGY INC
  • US20260023497A1 patent drawing
  • US20260023497A1 patent drawing
  • US20260023497A1 patent drawing

AI summary

A system includes a memory array, a temperature sensor including a temperature-dependent circuit, a ramp voltage source producing a ramp voltage that increases from a predefined starting value, and at least one processing device, operatively coupled with the memory array, the temperature sensor, and the ramp voltage source. The at least one processing device is to perform operations including determining a reference phase value reflecting a first amount of time for the ramp voltage starting at the predefined starting value to reach a reference voltage value, determining a sampling phase value reflecting a second amount of time for the ramp voltage starting at the predefined starting value to reach a temperature-dependent voltage value produced by the temperature-dependent circuit, and causing, based on the reference phase value and the sampling phase value, a temperature within the memory device to be determined.